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Datasheet

BLF245
(Product Specification)
02-Sep-03, 16 pages, 99 kB

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General description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.

Matched gate-source voltage (VGS) groups are available on request.

Features

  • High power gain
  • Low noise figure
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch.

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
BLF245BLF2459338 170 60112Volume productionSOT123ABlister packStandard MarkingNot available
Always Pb-free

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
BLF2459338 170  60112  NADIGI-KEY CORPORATION37611/19/2008 Buy online Order samples
   EUFARNELL711/13/2008 Buy online  
   NAFUTURE ELECTRONICS- NORTH AMER35411/17/2008 Buy online  
   NAMOUSER ELECTRONICS11811/19/2008 Buy online  
   NANEWARK611/19/2008 Buy online  

Parametrics/similar products

Type numberPackageDescriptionPOWER
GAIN(dB)
ApplicationEfficiency(%)LOAD
POWER(W)
Frequency(MHz)Operating voltage(VDC)
BLF245SOT123A
VHF VDMOS RF POWER Transistor15.5Broadcast and VHF Communication transmitters653017528

Similar products

BLF245 links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

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