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PUMF12

PNP general purpose transistor; NPN resistor-equipped transistor

PNP general purpose transistor and an NPN resistor-equipped transistor in a SOT363 (SC-88) plastic package.

This product has been discontinued, click here for discontinuation information and replacement parts.

Features and benefits

  • General purpose transistor and resistor equipped transistor in one package
  • 100 mA collector current
  • 50 V collector-emitter voltage
  • 300 mW total power dissipation
  • SOT363 package; replaces two SOT323 (SC-70)packaged devices on same PCB area
  • Reduced pick and place costs.

Applications

  • Power management switch for portable equipment, e.g. cellular phone and CD player
  • Switch for regulator.

Parametrics

Type number Package version Package name Size (mm)
PUMF12 SOT363 TSSOP6 2.1 x 1.25 x 0.95

Package

All type numbers in the table below are discontinued. See the table Discontinuation information for more information.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PUMF12 PUMF12,115
(934057332115)
Obsolete R2% no package information

Environmental information

All type numbers in the table below are discontinued. See the table Discontinuation information for more information.

Type number Orderable part number Chemical content RoHS RHF-indicator
PUMF12 PUMF12,115 PUMF12 rohs rhf rhf
Quality and reliability disclaimer

Documentation (2)

File name Title Type Date
PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Data sheet 2002-11-06
PUMF12 PUMF12 SPICE model SPICE model 2024-03-26

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PUMF12 PUMF12 SPICE model SPICE model 2024-03-26

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.