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SI2304DS

N-channel TrenchMOS intermediate level FET

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued, click here for discontinuation information and replacement parts.

Alternatives

Features and benefits

  • Saves PCB space due to small footprint
  • Suitable for high frequency applications due to fast switching characteristics

Applications

  • Battery management
  • High-speed switching
  • Low power DC-to-DC convertors

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V (mΩ) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Automotive qualified Release date
SI2304DS SOT23 SOT23 End of life N 1 117 190 1.7 1.35 4.6 0.83 N 2011-01-24

Package

All type numbers in the table below are discontinued. See the table Discontinuation information for more information.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
SI2304DS SI2304DS,215
(934056633215)		 Obsolete %2S empty empty SOT23
(SOT23) 		SOT23 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT23_215
SI2304DS/DG,215
(934061775215)		 Obsolete SOT23_215

Environmental information

All type numbers in the table below are discontinued. See the table Discontinuation information for more information.

Type number Orderable part number Chemical content RoHS RHF-indicator
SI2304DS SI2304DS,215 SI2304DS rohs rhf rhf
SI2304DS SI2304DS/DG,215 SI2304DS rohs rhf rhf
Quality and reliability disclaimer

Documentation (17)

File name Title Type Date
SI2304DS N-channel enhancement mode field-effect transistor Data sheet 2001-08-19
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT23 3D model for products with SOT23 package Design support 2019-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT23_mk plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Marcom graphics 2017-01-28
SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Package information 2022-10-12
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
SI2304DS_19_04_2012 SI2304DS Spice model SPICE model 2013-12-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
SI2304DS_19_04_2012 SI2304DS Spice model SPICE model 2013-12-12
SOT23 3D model for products with SOT23 package Design support 2019-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet