Our Power GaN FET team, based in Manchester, has a vacancy for a focused Design Engineer. The position is a key role within TeamNexperia and directly contributes to our ability to successfully produce GaN devices.
As an experienced engineer with a degree background in Electronics Engineering, Physics, or similar discipline, you will contribute by developing models of GaN devices, design test structures for enabling accurate simulation, designing next-generation technologies, manage data analysis, DoE and reporting, and a number of additional responsibilities in the development of our future GaN products.
Our GaN group sits within the MOS Discretes business in the UK, which is one of the top suppliers of high-quality MOSFETs to the automotive industry.
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