Features and benefits
- Wide supply voltage range from 0.7 V to 2.75 V
- Low input capacitance; CI = 0.5 pF (typical)
- Low output capacitance; CO = 1.0 pF (typical)
- Low dynamic power consumption; CPD = 2.5 pF at VCC = 1.2V (typical)
- Low static power consumption; ICC = 0.6μA (85 °C maximum)
- High noise immunity
- Complies with JEDEC standard:
- JESD8-12A.01 (1.1 V to 1.3 V)
- JESD8-11A.01 (1.4 V to 1.6 V)
- JESD8-7A (1.65 V to 1.95 V)
- JESD8-5A.01 (2.3 V to 2.7 V)
- ESD protection:
- HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
- CDM JESD22-C101E exceeds 1000 V
- Latch-up performance exceeds 100 mA per JESD 78 Class II
- Inputs accept voltages up to 2.75 V
- Low noise overshoot and undershoot < 10 % of VCC
- IOFF circuitry provides partial Power-down mode operation
- Multiple package options
- Specified from -40 °C to +85 °C
Documentation (4)
File name | Title | Type | Date |
---|---|---|---|
74AXP1G10 | Low-power 3-input NAND gate | Data sheet | 2017-03-30 |
axp1g10 | 74AXP1G10 IBIS model | IBIS model | 2015-10-11 |
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 | AXP – Extremely low-power logic technology portfolio | Leaflet | 2019-04-05 |
Nexperia_Selection_guide_2023 | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
Support
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Models
File name | Title | Type | Date |
---|---|---|---|
axp1g10 | 74AXP1G10 IBIS model | IBIS model | 2015-10-11 |