Low VCEsat (BISS) Resistor Equiped Transistors

Enhanced benefits from BISS-RET combos

RETs make excellent space- and cost-saving solutions, reducing your component count and simplifying circuit design. By making them with a BISS transistor, your designs can also benefit from enhanced performance, including high collector current capability and high collector current gain. We offer a broad range of SMD and leaded packages for you to choose from.

Key features and benefits

  • ± 10% resistance ratio tolerance
  • Reduces pick and place costs
  • Built-in bias resistors
  • Reduces component count
  • 100 mA, 500 mA and up to 800 mA output current capability
  • Simplifies circuit design

Key applications

  • Controlling IC inputs
  • Digital systems
  • Switching loads

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Low VCEsat (BISS) Resistor Equiped Transistors
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Products

Type number Description Status Quick access
PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 1 kOhm ACT
PBRN113ET NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 1 kOhm Production
PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm ACT
PBRN123ET NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm Production
PBRN113ZT NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm Production
PBRN123YT NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm Production
PBRP113ET PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm Production
PBRP113ZT PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm Production
PBRP123ET PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm Production
PBRP123YT PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm Production

Marcom graphics (1)

File name Title Type Date
TSSOP6_SOT363_mk plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body Marcom graphics 2017-01-28

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