Low VCEsat (BISS) transistors double

To achieve design bliss, use our double BISS

If your design has to keep power consumption and heat dissipation to a minimum, then our low VCEsat (BISS) devices make the perfect solution. They are highly energy efficient and have a high collector current capability (due to an innovative mesh-emitter technology).

Key features and benefits

  • High performance in reduced board space
  • High collector current gain hFE at high IC
  • Low collector-emitter saturation voltage VCEsat and corresponding resistance RCEsat (down to <30 mΩ)
  • Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK
  • High collector current capability IC and ICM

Key applications

  • Power switch for LAN and ADSL systems / medium power DC-to-DC conversion
  • Inverter applications e.g. TFT displays
  • Medium power peripheral drivers e.g. fan, motor
  • Battery chargers / loadswitches
  • Strobe flash units for digital still cameras and mobile phones

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Low VCEsat (BISS) transistors double
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Products

Type number Description Status Quick access
DFN2020_6_SERIES Collector-emitter voltage VCEO = 30 V, 60 V and 120 V; collector current IC = 1 A and 2 A ACT
PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4112PANP 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4220PANS 20 V, 2 A NPN/NPN low VCEsat BISS double transistor Production
PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4260PANPS 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor Production
PBSS4260PANS 60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor Production
PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5160PAPS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5220PAPS 20V, 2 A PNP/PNP low VCEsat (BISS) double transistor Production
PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5255PAPS 55V, 2A PNP/PNP low VCEsat (BISS) double transistor Production
PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5260PAPS 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor Production
PBSS2515VPN 15 V low VCEsat NPN/PNP transistor Production
PBSS2515VS 15 V low VCEsat NPN double transistor Production
PBSS2515YPN 15 V low VCEsat NPN/PNP transistor Production
PBSS3515VS 15 V low VCEsat PNP double transistor Production
PBSS4021SN 20 V, 7.5 A NPN/NPN low V_CEsat (BISS) transistor Production
PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS4021SPN 20 V NPN/PNP low V_CEsat (BISS) transistor Production
PBSS4032SN 30 V, 5.7 A NPN/NPN low V_CEsat (BISS) transistor Production
PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS4032SPN 30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4041SN 60 V, 6.7 A NPN/NPN low V_CEsat (BISS) transistor Production
PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS4041SPN 60 V NPN/PNP low V_CEsat (BISS) transistor Production
PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Production
PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Production
PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4350SS 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Production

Leaflet (1)

File name Title Type Date
75017639 Full power in half the footprint - First bipolar transistors in LFPAK / Power-SO8 Leaflet 2015-02-20

Marcom graphics (1)

File name Title Type Date
DFN2020D-6_SOT1118D_mk plastic, thermally enhanced ultra thin and small outline package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28

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