Low VCEsat (BISS) transistors PNP - N-channel MOSFET combination

A two-in-one solution with combined benefits

Can your design benefit from a MOSFET-bipolar transistor combination? These devices combine a PNP Breakthrough in Small Signal (BISS) transistor and an N-channel MOSFET, providing numerous performance and design advantages, including high efficiency, low component count, and cost and board space savings.

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Low VCEsat (BISS) transistors PNP - N-channel MOSFET combination
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Products

Type number Description Status Quick access
PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Production
PBSM5240PFH 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Production

Marcom graphics (1)

File name Title Type Date
DFN2020-6_SOT1118_mk plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28

Selection guide (1)

File name Title Type Date
nexperia_selection_guide_2019_201901 Selection guide 2019. Discretes, Logic and MOSFETs Selection guide 2018-12-12

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