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Silicon Carbide (SiC) Schottky diodes

Silicon Carbide Schottky diodes for fast switching power conversion

Nexperia’s leading edge Silicon Carbide (SiC) Schottky diodes for ultra-high performance, low loss, and high efficiency power conversion applications. SiC Schottky diodes benefit from temperature independent capacitive turn-off and zero recovery switching behavior, combined with an outstanding figure-of-merit (Qc x VF). The Merged PiN Schottky diode improves the robustness expressed in a high IFSM.

Key features

  • Zero forward and reverse recovery 
  • Temperature independent switching performance 
  • Fast and smooth switching performance 
  • High IFSM capability 
  • Low leakage current 
  • Easy to parallel / positive temperature coefficient 
  • Outstanding figure-of-merit (Qc x VF
  • Thermal stability up to 175 °C junction temperature 
  • AEC-Q101 qualification

Key applications

Industrial and consumer applications

  • Switch Mode Power Supply (SMPS)
  • AC-DC and DC-DC converters
  • Battery charging infrastructure
  • Server and telecom power supply
  • Uninterruptible Power Supply (UPS)
  • Photovoltaic inverters

Automotive applications:

  • On-Board Chargers (OBC)
  • Inverters
  • High voltage DC-DC converter

Key benefits

  • High power density
  • Reduced system cost
  • System miniaturization
  • High temperature operation
  • Reduced EMI
  • Increased ruggedness and reliability

Product range

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Products

Type number Description Status Quick access
PSC1065H 650 V, 10 A SiC Schottky diode in DPAK R2P Development
PSC1065J 650 V, 10 A SiC Schottky diode in D2PAK R2P Development
PSC1065K 650 V, 10 A SiC Schottky diode in TO-220-2 Development
PSC1065L 650 V, 10 A SiC Schottky diode in TO-247-2 Development
Visit our documentation center for all documentation

Leaflet (1)

File name Title Type Date
Nexperia_document_SiC-factsheet SiC Schottky Diodes - New Silicon Carbide Diode portfolio for high-power Leaflet 2021-11-05

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