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IP4221CZ6-S

ESD protection for high-speed interfaces

The device is designed to protect high-speed interfaces such as USB 2.0, Ethernet and Digital Visual Interface (DVI) against ElectroStatic Discharge (ESD).

The device includes four high-level ESD protection diode structures for high-speed signal lines and is encapsulated in a leadless ultra small DFN1410-6 (SOT886) plastic package.

Special diode configuration protects all signal lines and offers ultra low line capacitance of only 1 pF. The rail-to-rail diodes are connected to the Zener diode which allows ESD protection to be independent of supply voltage.

This product has been discontinued, click here for discontinuation information and replacement parts.

Features and benefits

  • System ESD protection for high-speed data lines such as USB 2.0, Ethernet and DVI
  • All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±8 kV according to IEC 61000-4-2, level 4
  • Line capacitance of only 1 pF for each channel
  • Leadless ultra small DFN1410-6 package: 1 x 1.45 x 0.5 mm; pitch 0.5 mm

Applications

  • High-speed receiver and transmitter port protection for:
    • Mobile phones, smartphones and handsets
    • TVs and monitors
    • DVD recorders and players
    • Notebooks, mother boards, graphic cards and ports
    • Set-top boxes and game consoles

Parametrics

Type number Package name
IP4221CZ6-S XSON6

Documentation (3)

File name Title Type Date
IP4221CZ6-S ESD protection for high-speed interfaces Data sheet 2012-12-13
AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Application note 2021-04-12
Nexperia_document_brochure_ESD-Protection-Applications_022017 ESD Protection Application guide Brochure 2018-12-21

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Models

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet