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GAN039-650NBBA

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

This product has been fully designed and qualified to meet AEC-Q101 requirements.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors

Features and benefits

  • Fully automotive qualified to AEC-Q101:
    • 175 °C rating suitable for thermally demanding environments
  • Simplified driver design as standard level MOSFET gate drivers can be used:
    • 0 V to 12 V drive voltage
    • Gate threshold voltage VGSth of 4 V
  • Robust gate oxide with ±20 V VGS rating
  • High gate threshold voltage of 4 V for gate bounce immunity
  • Low body diode Vf for reduced losses and simplified dead-time adjustments
  • Transient over-voltage capability for increased robustness
  • CCPAK package technology:
    • Improved reliability, with reduced Rth(j-mb) for optimal cooling
    • Lower inductances for lower switching losses and EMI
    • 175 °C maximum junction temperature
    • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment
    • Easy solder wetting for good mechanical solder joints

Applications

  • Automotive On-Board-Charger systems
  • Automotive DC-DC
  • Hard and soft switching converters for industrial and datacom power
  • Bridgeless totempole PFC
  • PV and UPS inverters
  • Servo motor drives

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
GAN039-650NBBAGAN039-650NBBAZ
( 9346 621 52139 )
DevelopmentStandard Marking
(SOT8000)
Reel 13" Q4/T2

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHS / RHFMSLMSL leadfree
GAN039-650NBBAGAN039-650NBBAZNot available
Quality and reliability disclaimer

Documentation (6)

File nameTitleTypeDate
GAN039-650NBBA650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 packageData sheet2020-07-31
nexperia_document_brochure_GaN_2020_CHN高功率氮化镓场效应 晶体管Brochure2020-07-15
nexperia_document_leaflet_GaN_CCPAKCCPAK Power GaN FETs flyerLeaflet2020-08-17
nexperia_document_leaflet_CCPAK_2020_CHNCCPAK Power GaN FETs flyerLeaflet2020-08-20
nexperia_whitepaper_gan_robustness_aecq101White paper: GaN FET technology and the robustness needed for AEC-Q101 qualificationWhite paper2020-06-08
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN白皮书: 功率GaN技术: 高效功率转换的需求White paper2020-08-17

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingBuy online

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.