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NGW50T60M3DF

600 V, 50 A trench field-stop IGBT with full rated silicon diode

The NGW50T60M3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠-⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T60M3DF is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 600 V, 50 A IGBT is optimized for high-voltage, low⁠-⁠frequency industrial power inverter and servo motor drive applications.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors

Features and benefits

  • Collector current (IC) rated at 50 A

  • Low conduction and switching losses

  • Stable and tight parameters for easy parallel operation

  • Maximum junction temperature of 175 °C

  • Fully rated as a soft fast reverse recovery diode

  • 5 μs short circuit withstand time

  • RoHS compliant, lead-free plating

Applications

  • Motor drives for industrial and consumer appliances

    • Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.

  • Power inverters

    • Uninterruptible Power Supply (UPS) inverter

    • Photovoltaic (PV) strings

    • EV charging

  • Induction heating

  • Welding

Parametrics

Type numberProduct statusVCE [max] (V)IC [typ] (A)Switching frequencytsc [max] (µs)Tj [min] (°C)Tj [max] (°C)Package versionPackage name
NGW50T60M3DFQualification60050M35-40175SOT429-2TO-247-3L

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
NGW50T60M3DFNGW50T60M3DFQ
( 9346 656 62127 ) 		Samples available / Development50T60M3DF
TO-247-3L
(SOT429-2) 		SOT429-2SOT429-2_127

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
NGW50T60M3DFNGW50T60M3DFQNot available
Quality and reliability disclaimer

Documentation (6)

File nameTitleTypeDate
NGW50T60M3DF600 V, 50 A trench field-stop IGBT with full rated silicon diodeData sheet2023-07-06
AN90042Nexperia IGBT family product introductionApplication note2023-07-03
nexperia_igbt_flyer_lr_202304600/650 V IGBTs for industrial applicationsLeaflet2023-07-03
nexperia_igbt_flyer_lr_CHN_202304600/650 V IGBTs 适用于工业应用Leaflet2023-07-03
SOT429-2_TO-247-TLPlastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3LMarcom graphics2023-04-11
SOT429-2_127TO-247-3L; Tube pack; Standard product orientationPacking information2023-04-03

Support

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PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet