ASFETs for Hotswap and Soft Start

Reliable linear mode, enhanced SOA and low RDS(on)

Whether it is in the cloud or at the edge, we truly live in a 24/7 world. So much of our daily lives depend on rack-based computers, communications and storage systems that are always-on. Ensuring these systems do not experience any power disruption and to protect the components on replacement boards when they are inserted into a live system, it is essential that in-rush current is carefully controlled.  In normal MOSFETs, strong SOA and low RDS(on) are mutually exclusive. Offering both capabilities in a single device, Nexperia’s specific MOSFETs for Hotswap and Soft Start are optimized for a non-stop world. 

ASFETs for Hotswap and Soft Start are designed specifically to support always-on applications and equipment:

  • MOSFETs with a strong linear mode performance and enhanced Safe Operating Area (SOA) are required to manage in-rush current effectively and reliably when capacitive loads are introduced to the backplane
  • Once a replacement board is safely powered up, the MOSFET is turned fully ON. In this mode of operation, a low RDS(on) value is of primary importance, helping to keep temperatures down and system efficiency at a maximum
  
    

Hot swap for communications infrastructure

 

Featured products

PSMNR51-25YLH

PSMN4R8-100BSE

PSMN2R3-100SSE

N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E  N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK N-channel 100 V, 2.3 mΩ, SuperSOA MOSFET in LFPAK88

 

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Products

Type number Description Status Quick access
PSMN013-100YSE N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 Production
PSMN0R7-25YLD N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN0R9-25YLD N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Production
PSMN1R3-30YL N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Production
PSMN1R5-30BLE N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK Production
PSMN1R7-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Production
PSMN2R0-30YLE N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Production
PSMN2R3-100SSE N-channel 100 V, 2.3 mΩ, SuperSOA MOSFET in LFPAK88 Development
PSMN3R4-30BLE N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK Production
PSMN3R7-100BSE N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK Production
PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK Production
PSMN4R8-100PSE N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package Production
PSMN7R6-100BSE N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK Production
PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package Production
PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR60-25YLH N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
Visit our documentation center for all documentation

Application note (1)

File name Title Type Date
AN90016 Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03

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