DFN1010

Small & powerful – High performance on a small footprint

The DFN1010 package features high currents of up to 3.2 A and a high power dissipation of 1000 mW on a small footprint of only 1.1 mm². This new product series is housed in tiny leadless packages ideal for use in tight-footprint power management and load switches. Featuring small yet powerful high-Ptot MOSFETs with benchmark values for RDSon.



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The next generation of small packaging - featuring currents up to 3 A on a 1.1 mm² footprint

The DFN1010 can be used for new designs in space constrained application and replace larger packages in the same RDSon range.



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Package

Package name

Dimension (mm)

Applications



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DFN1010D-3 (SOT1215)

1.1 x 1.0 x 0.37

  • Portable, mobile and automotive

    applications that require small-footprint solutions

  • Power management
  • Charging circuit
  • Power switches (motors, fans and more)
  • Level shifting
  • LED lighting (automotive matrix light and others)


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DFN1010B-6 (SOT1216)

1.1 x 1.0 x 0.37

Key features and benefits

  • N-channel and P-channel
  • Low RDSon down to 34 mΩ
  • ID up to 3.2 A
  • Low voltage drive (VGS(th) = 0.65 V [typ])
  • Voltage range of 12 to 80 V
  • ESD protection of more than 1 kV

Related package information

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Products

Type number Description Status Quick access
NX7002BKXB 60 V, dual N-channel Trench MOSFET Production
PMCXB1000UE 30 V, complementary N/P-channel Trench MOSFET Production
PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET Production
PMCXB900UEL 20 V, complementary N/P-channel Trench MOSFET Production
PMDXB1200UPE 30 V, dual P-channel Trench MOSFET Production
PMDXB550UNE 30 V, dual N-channel Trench MOSFET Production
PMDXB600UNE 20 V, dual N-channel Trench MOSFET Production
PMDXB600UNEL 20 V, dual N-channel Trench MOSFET Production
PMDXB950UPE 20 V, dual P-channel Trench MOSFET Production
PMDXB950UPEL 20 V, dual P-channel Trench MOSFET Production
PMXB120EPE 30 V, P-channel Trench MOSFET Production
PMXB350UPE 20 V, P-channel Trench MOSFET Production
PMXB360ENEA 80 V, N-channel Trench MOSFET Production
PMXB40UNE 12 V, N-channel Trench MOSFET Production
PMXB43UNE 20 V, N-channel Trench MOSFET Production
PMXB56EN 30 V, N-channel Trench MOSFET Production
PMXB65ENE 30 V, N-channel Trench MOSFET Production
PMXB65UPE 12 V, P-channel Trench MOSFET Production
PMXB75UPE 20 V, P-channel Trench MOSFET Production

Documentation

File name Title Type Date
DFN1010-6_SOT891_mk plastic, extremely thin small outline package; 6 terminals; 0.55 mm pitch; 1 mm x 1 mm x 0.5 mm body Marcom graphics 2017-01-28
nexperia_selection_guide_2019_201901 Selection guide 2019. Discretes, Logic and MOSFETs Selection guide 2018-12-12

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