Nexperia

NextPowerS3

Nexperia’s NextPowerS3 MOSFETs – Superfast Switching with Soft-recovery

Welcome to NextPowerS3, a new high-performance 30 V and 40 V MOSFET platform incorporating Nexperia’s unique superjunction, “SchottkyPlus” technology. NextPowerS3 is the industry’s first MOSFET to deliver the high frequency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

The trend in recent years has been to create faster and faster switching MOSFETs in an effort to reduce switching losses and increase the efficiency of switch mode power supply (SMPS) designs. However, faster switching on its own can generate problems in terms of switch node voltage spikes, coupled gate glitches and the potential for shoot-through, raising EMI and reliability concerns. One popular solution has been to integrate Schottky and Schottky-like diodes into MOSFET structures in order to minimize reverse-recovery losses.

However, Schottky diodes introduce high leakage currents, especially at elevated temperatures, which impact efficiency, battery life and the ability to screen for defects in the manufacturing process. Combining superfast switching with soft recovery, Nexperia’s NextPowerS3 range addresses each of these concerns, delivering increased efficiency and higher power density, while keeping voltage spikes under control and limiting leakage current to less than 1 µA.

NextPowerS3 is suitable for a variety of applications, including high efficiency power supplies for telecoms and cloud computing, high performance portable computing and battery-powered motor control, such as rechargeable power tools.

Key features and benefits

  • High system efficiency through ultra low QG, QGD and QOSS
  • Reduced switch-node voltage spikes; EMI friendly
  • Unique SchottkyPlus technology; integrated Schottky performance without high leakage current
  • No wire bonds, no glue; qualified to 175 °C

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Products

Type number Description Status Quick access
PSMN0R7-25YLD N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN0R9-25YLD N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-25YLD N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-40YLD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R2-25YLD N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R4-30YLD N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R4-40YLD N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology Production
PSMN1R6-30MLH N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Qualification
PSMN1R7-25YLD N-channel 25 V, 1.75 mΩ, 170 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN2R0-25MLD N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN2R0-25YLD N-channel 25 V, 2.09 mΩ, 140 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN2R4-30YLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN3R5-25MLD N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN4R0-30YLD N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN4R2-30MLD N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN5R3-25MLD N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN5R4-25YLD N-channel 25 V, 5.69 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN6R0-25YLD N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN6R0-30YLD N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN6R1-25MLD N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN6R1-30YLD N-channel 30 V, 6.1 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN7R5-30MLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN7R5-30YLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Development
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Development

Documentation

File name Title Type Date
Nexperia_selection_guide_2017 Selection guide 2017 Discretes, Logic and MOSFETs Selection guide 2017-02-14
NextpowerS3_scratchcardNexperia NextpowerS3 scratch card Nexperia Marcom graphics 2017-02-27
Nexperia-Selection-Guide-2018 Selection guide 2018. Discretes, Logic and MOSFETs Selection guide 2018-01-18

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