The trend in recent years has been to create faster and faster switching MOSFETs in an effort to reduce switching losses and increase the efficiency of switch mode power supply (SMPS) designs. However, faster switching on its own can generate problems in terms of switch node voltage spikes, coupled gate glitches and the potential for shoot-through, raising EMI and reliability concerns. One popular solution has been to integrate Schottky and Schottky-like diodes into MOSFET structures in order to minimize reverse-recovery losses.
However, Schottky diodes introduce high leakage currents, especially at elevated temperatures, which impact efficiency, battery life and the ability to screen for defects in the manufacturing process. Combining superfast switching with soft recovery, Nexperia’s NextPowerS3 range addresses each of these concerns, delivering increased efficiency and higher power density, while keeping voltage spikes under control and limiting leakage current to less than 1 µA.
NextPowerS3 is suitable for a variety of applications, including high efficiency power supplies for telecoms and cloud computing, high performance portable computing and battery-powered motor control, such as rechargeable power tools.
Key features and benefits
- High system efficiency through ultra low QG, QGD and QOSS
- Reduced switch-node voltage spikes; EMI friendly
- Unique SchottkyPlus technology; integrated Schottky performance without high leakage current
- No wire bonds, no glue; qualified to 175 °C
Parametric search
Please wait loading data...Products
| Type number | Description | Status | Quick access |
|---|---|---|---|
| PSMN0R7-25YLD | N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN0R9-25YLD | N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN0R9-30YLD | N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R0-25YLD | N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R0-30YLD | N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R0-40YLD | N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R2-25YLD | N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R2-30YLD | N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R4-30YLD | N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R4-40YLD | N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology | Production | |
| PSMN1R5-25MLH | N-channel 25 V, 1.7 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Development |
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| PSMN1R6-30MLH | N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
| PSMN1R7-25YLD | N-channel 25 V, 1.75 mΩ, 170 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R8-30MLH | N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Development |
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| PSMN2R0-25MLD | N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN2R0-25YLD | N-channel 25 V, 2.09 mΩ, 140 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN2R4-30MLD | N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN2R4-30YLD | N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN3R0-30YLD | N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN3R5-25MLD | N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN4R0-30YLD | N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN4R2-30MLD | N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN5R3-25MLD | N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN5R4-25YLD | N-channel 25 V, 5.69 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN6R0-25YLD | N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN6R0-30YLD | N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN6R1-25MLD | N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN6R1-30YLD | N-channel 30 V, 6.1 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN7R5-30MLD | N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN7R5-30YLD | N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMNR51-25YLH | N-channel 25 V, 0.51 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Development | |
| PSMNR58-30YLH | N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
| PSMNR60-25YLH | N-channel 25 V, 0.6 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Development |
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| PSMNR70-30YLH | N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production |
Documentation
| File name | Title | Type | Date |
|---|---|---|---|
| NextpowerS3_scratchcardNexperia | NextpowerS3 scratch card Nexperia | Marcom graphics | 2017-02-27 |
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Or contact us for further support.