PSMN063-150D

N-channel TrenchMOS SiliconMAX standard level FET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • Higher operating power due to low thermal resistance
  • Low conduction losses due to low on-state resistance
  • Suitable for high frequency applications due to fast switching characteristics

Target applications

  • DC-to-DC convertors
  • Switched-mode power supplies

Parametrics

Type numberPackage nameProduct statusChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN063-150DDPAKProductionN1150631752920551505503N23902402010-11-13

Package

Type numberPackageOutline versionReflow-/Wave solderingPackingStatusMarkingOrderable part number, (Ordering code (12NC))
PSMN063-150D
DPAK
(SOT428)
SOT428Reel 13" Q1/T1ActivePSMN063-150DPSMN063-150D,118
( 9340 557 58118 )

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHS / RHFLeadfree conversion dateIFRMTBF (hour)MSLMSL leadfree
PSMN063-150DPSMN063-150D,118PSMN063-150D0.0452.24E1011
Quality and reliability disclaimer

Documentation (14)

File nameTitleTypeDate
PSMN063-150DN-channel TrenchMOS SiliconMAX standard level FETData sheet2017-05-08
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2015-12-10
AN10874LFPAK MOSFET thermal design guideApplication note2018-04-24
AN11113LFPAK MOSFET thermal design guide - Part 2Application note2018-04-24
AN11158Understanding power MOSFET data sheet parametersApplication note2014-02-04
AN11160Designing RC SnubbersApplication note2012-10-01
AN11156Using Power MOSFET Zth CurvesApplication note2012-10-10
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11261Using RC Thermal ModelsApplication note2014-05-19
AN11599Using power MOSFETs in parallelApplication note2016-07-13
PSMN063_150DPSMN063_150D SPICE modelSPICE model2012-06-08
TN00008Power MOSFET frequently asked questions and answersTechnical note2016-10-31
SOT428_118Tape reel SMD; standard product orientation; 12NC ending 118Packing2012-11-23
SOT428plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm bodyOutline drawing2017-01-30

Support

Find answers to your design questions on this page. If available you can find information in our Nexperia Support Community or you can find Nexperia models and Design tools.

Models

File nameTitleTypeDate
PSMN063_150DPSMN063_150D SPICE modelSPICE model2012-06-08

Ordering

DistributorBuy online
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Avnet ExpressBuy online
Chip One StopBuy online
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Farnell EuropeBuy online
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Sample

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