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PSMN4R3-80BS ECAD models PCB Symbol, Footprint & ECAD Model

N-channel 80 V, 4.3 mΩ standard level MOSFET in D2PAK

Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Features and benefits

  • High efficiency due to low switching and condition losses
  • Suitable for standard level gate drive

Applications

  • DC-to-DC converters
  • Load switch
  • Motor control
  • Server power supplies

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN4R3-80BSSOT404D2PAKDevelopmentN1804.317512028.41043061093N81617012010-12-28

Documentation (11)

File nameTitleTypeDate
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2020-07-02
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11160Designing RC SnubbersApplication note2012-10-01
AN11156Using Power MOSFET Zth CurvesApplication note2012-10-10
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2013-11-08
AN11261RC Thermal ModelsApplication note2020-05-11
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
TN00008Power MOSFET frequently asked questions and answersTechnical note2020-06-24

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