PMPB29XNEA

30 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Low threshold voltage
  • Trench MOSFET technology
  • Side wettable flanks for optical solder inspection
  • ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B)
  • AEC-Q101 qualified

Target applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNumber of transistorsVDS [max] (V)VGS [max] (V)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PMPB29XNEASOT1220DFN2020MD‑6ProductionN1308334015052.112.41.720.65Y11501102018-09-10

Package

Type numberPackageOutline versionReflow-/Wave solderingPackingStatusMarkingOrderable part number, (Ordering code (12NC))
PMPB29XNEA
DFN2020MD‑6
(SOT1220)
SOT1220Reel 7" Q1/T1Active4HPMPB29XNEAX
( 9340 709 25115 )

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHS / RHFLeadfree conversion dateMSLMSL leadfree
PMPB29XNEAPMPB29XNEAXPMPB29XNEA
Quality and reliability disclaimer

Documentation (4)

File nameTitleTypeDate
PMPB29XNEA30 V, N-channel Trench MOSFETData sheet2018-09-10
Nexperia_document_Leaflet_DFN2020MD_6_06092018DFN2020MD-6 Leadless package with side wettable flanksLeaflet2018-09-11
SOT1220_115DFN2020MD-6; reel pack; Standard orientation; 12NC ending 115Packing2013-02-19
SOT1220plastic, leadless thermal enhanced ultra thin small outline package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm bodyOutline drawing2018-06-08

Support

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Ordering

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Sample

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Sample orders normally take 2-4 days for delivery.

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