Search results for "DFN2020D-6"

Products (15)

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NCR321PAS

Automotive Qualified

Description

250 mA LED driver in DFN2020D-6

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LED driver consisting of resistor-equipped NPN transistor with two diodes on one chip in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
V_SUP [max] (V)	16

Limiting I_O with external resistor [max] (mA)	300
I_O [max] (mA)	11
P_tot [max] (mW)	700
Polarity	NPN

NCR421PAS

Automotive Qualified

Description

150 mA LED driver in DFN2020D-6

Status

Production

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LED driver consisting of resistor-equipped NPN transistor with two diodes on one chip in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
V_SUP [max] (V)	40

Limiting I_O with external resistor [max] (mA)	200
I_O [max] (mA)	11
P_tot [max] (mW)	700
Polarity	NPN

NCR320PAS

Automotive Qualified

Description

250 mA LED driver in DFN2020D-6

Status

Production

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LED driver consisting of resistor-equipped NPN transistor with two diodes on one chip in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
V_SUP [max] (V)	16

Limiting I_O with external resistor [max] (mA)	300
I_O [max] (mA)	11
P_tot [max] (mW)	700
Polarity	NPN

NCR420PAS

Automotive Qualified

Description

150 mA LED driver in DFN2020D-6

Status

Production

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LED driver consisting of resistor-equipped NPN transistor with two diodes on one chip in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
V_SUP [max] (V)	40

Limiting I_O with external resistor [max] (mA)	200
I_O [max] (mA)	11
P_tot [max] (mW)	700
Polarity	NPN

PMDPB56XNEA

Automotive Qualified

Description

30 V, dual N-channel Trench MOSFET

Status

Production

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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package ...

Package version	SOT1118D
Package name	DFN2020D-6
Product status	Production
Channel type	N
Nr of transistors	2
V_DS [max] (V)	30
V_GS [max] (V)	12
R_DSon [max] @ V_GS = 4.5 V (mΩ)	72
R_DSon [max] @ V_GS = 2.5 V (mΩ)	102
T_j [max] (°C)	150

I_D [max] (A)	3.1
Q_GD [typ] (nC)	0.8
Q_G(tot) [typ] @ V_GS = 4.5 V (nC)	2.9
P_tot [max] (W)	0.485
V_GSth [typ] (V)	1
Automotive qualified	Y
C_iss [typ] (pF)	256
C_oss [typ] (pF)	31
Date	2016-04-19

PBSS5255PAPS

Description

55V, 2A PNP/PNP low VCEsat (BISS) double transistor

Status

Production

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PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) ...

PBSS5255PAPS-Q

Automotive qualified
55V, 2A PNP/PNP low VCEsat (BISS) double transistor

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
Polarity	PNP
Configuration	1

P_tot (mW)	370
V_CEO [max] (V)	-55
I_C [max] (mA)	-2000
h_FE [min]	170
Automotive qualified	N

PBSS5260PAPS

Automotive Qualified

Description

60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor

Status

Production

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PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
Product status	Production
Polarity	PNP
Nr of transistors	2

V_CEO [max] (V)	-60
I_C [max] (A)	-2
V_CEsat [max] (PNP) (mV)	-390
R_CEsat@I_C [max]; I_C/I_B =10 [typ] (mΩ)	310
h_FE [min]	170
f_T [typ] (MHz)	100

PBSS4260PANS

Automotive Qualified

Description

60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor

Status

Production

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NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
Product status	Production
Polarity	NPN
Nr of transistors	2

V_CEO [max] (V)	60
I_C [max] (A)	2
V_CEsat [max] (NPN) (mV)	350
R_CEsat@I_C [max]; I_C/I_B =10 [typ] (mΩ)	200.00000000000001
h_FE [min]	250
f_T [typ] (MHz)	140

PBSS4160PANS

Automotive Qualified

Description

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Status

Production

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NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
Product status	Production
Polarity	NPN
Nr of transistors	2
P_tot [max] (mW)	1040

V_CEO [max] (V)	60
I_C [max] (A)	1
V_CEsat [max] (NPN) (mV)	220
R_CEsat@I_C [max]; I_C/I_B =10 [typ] (mΩ)	239.99999999999999
h_FE [min]	290
f_T [typ] (MHz)	175

PBSS4220PANS

Automotive Qualified

Description

20 V, 2 A NPN/NPN low VCEsat BISS double transistor

Status

Production

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NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
Product status	Production
Polarity	NPN
Nr of transistors	2

V_CEO [max] (V)	20
I_C [max] (A)	2
V_CEsat [max] (NPN) (mV)	320
R_CEsat@I_C [max]; I_C/I_B =10 [typ] (mΩ)	170.00000000000001
h_FE [min]	250
f_T [typ] (MHz)	120

PBSS5160PAPS

Automotive Qualified

Description

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

Status

Production

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PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
Product status	Production
Polarity	PNP
Nr of transistors	2
P_tot [max] (mW)	1040

V_CEO [max] (V)	-60
I_C [max] (A)	-1
V_CEsat [max] (PNP) (mV)	-340
R_CEsat@I_C [max]; I_C/I_B =10 [typ] (mΩ)	359.99999999999999
h_FE [min]	170
f_T [typ] (MHz)	125

PBSS5220PAPS

Automotive Qualified

Description

20V, 2 A PNP/PNP low VCEsat (BISS) double transistor

Status

Production

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PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
Product status	Production
Polarity	PNP
Nr of transistors	2

V_CEO [max] (V)	-20
I_C [max] (A)	-2
V_CEsat [max] (PNP) (mV)	-390
R_CEsat@I_C [max]; I_C/I_B =10 [typ] (mΩ)	220
h_FE [min]	250
f_T [typ] (MHz)	95

PBSS4160PANPS

Automotive Qualified

Description

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Status

Production

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NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
Product status	Production
Polarity	NPN/PNP
Nr of transistors	2
P_tot [max] (mW)	1040

V_CEO [max] (V)	60
I_C [max] (A)	1
V_CEsat [max] (NPN) (mV)	220
V_CEsat [max] (PNP) (mV)	-340
R_CEsat@I_C [max]; I_C/I_B =10 [typ] (mΩ)	359.99999999999999
h_FE [min]	290
f_T [typ] (MHz)	175

PBSS4260PANPS

Automotive Qualified

Description

60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor

Status

Production

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NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
Product status	Production
Polarity	NPN/PNP
Nr of transistors	2
V_CEO [max] (V)	60

I_C [max] (A)	2
V_CEsat [max] (NPN) (mV)	350
V_CEsat [max] (PNP) (mV)	-500
R_CEsat@I_C [max]; I_C/I_B =10 [typ] (mΩ)	310
h_FE [min]	250
f_T [typ] (MHz)	140

PBSS5255PAPS-Q

Automotive Qualified

Description

55V, 2A PNP/PNP low VCEsat (BISS) double transistor

Status

Production

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PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) ...

Package version	SOT1118D
Package name	DFN2020D-6
Size (mm)	2 x 2 x 0.65
Product status	Production
Polarity	PNP
Nr of transistors	1
P_tot [max] (mW)	959.99999999999996

V_CEO [max] (V)	-55
I_C [max] (A)	-2
V_CEsat [max] (PNP) (mV)	-450
R_CEsat@I_C [max]; I_C/I_B =10 [typ] (mΩ)	250
h_FE [min]	170
f_T [typ] (MHz)	100