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PSMN1R1-80CSF

NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package

NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications.

Features and benefits

  • Low Qrr for higher efficiency and lower spiking

  • 400 Amps ID(max) continuous current rating

  • Low QG × RDSon FOM for high efficiency switching applications

  • Strong avalanche energy rating (Eas)

  • Avalanche rated and 100% tested

  • Ha-free and RoHS compliant CCPAK1212i package

  • Inverted package, suitable for top-side cooling

Applications

  • Battery protection

  • High power full and half-bridge configurations

  • BLDC motor control

  • OR-ing

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R1-80CSF SOT8005A CCPAK1212i Development N 1 80 1.16 175 400 34 206 1071 82 3 15363 4580 2024-05-06

Documentation (1)

File name Title Type Date
PSMN1R1-80CSF NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package Data sheet 2024-05-13

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Ordering, pricing & availability

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet