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BUK6C2R1-55C

N-channel TrenchMOS intermediate level FET

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance automotive applications.

This product has been discontinued, click here for discontinuation information and replacement parts.

Features and benefits

  • AEC Q101 compliant
  • High current handling capability, up to 320 A
  • Low conduction losses due to very low on-state resistance
  • Suitable for standard and logic level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V automotive systems
  • Electric and electro-hydraulic power steering
  • Motors, lamps and solenoids
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 5 V (mΩ) RDSon [max] @ VGS = 4.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK6C2R1-55C SOT427 D2PAK-7 End of life N 1 55 2.3 3.1 3.7 175 228 79 253 300 115 2.3 Y 12000 1075 2011-11-22

Package

All type numbers in the table below are discontinued. See the table Discontinuation information for more information.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
BUK6C2R1-55C BUK6C2R1-55C,118
(934065131118)		 Withdrawn / End-of-life BUK6C2R1 55C SOT427
D2PAK-7
(SOT427) 		SOT427 SOT427_118

Environmental information

All type numbers in the table below are discontinued. See the table Discontinuation information for more information.

Type number Orderable part number Chemical content RoHS RHF-indicator
BUK6C2R1-55C BUK6C2R1-55C,118 BUK6C2R1-55C rohs rhf
Quality and reliability disclaimer

Series

Documentation (16)

File name Title Type Date
BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Data sheet 2017-04-20
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2023-02-03
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT427 plastic, single-ended surface-mounted package (D2PAK-7); 7 leads; 1.27 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
BUK6C2R1-55C BUK6C2R1-55C Spice model SPICE model 2012-04-11
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
BUK6C2R1-55C BUK6C2R1-55C Thermal model Thermal model 2012-01-19

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
BUK6C2R1-55C BUK6C2R1-55C Spice model SPICE model 2012-04-11
BUK6C2R1-55C BUK6C2R1-55C Thermal model Thermal model 2012-01-19

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet