Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PESD9X7.0L

Unidirectional ESD protection diodes

Single unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882 leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients.

This product has been discontinued

Features and benefits

  • ESD protection of one line
  • Max. peak pulse power: PPP = 150W
  • Low clamping voltage: VCL = 10 V
  • Ultra low leakage current: IRM = 3 nA
  • AEC-Q101 qualified
  • ESD protection up to 30 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC 61000-4-5 (surge); IPP = 10 A
  • Ultra small SMD plastic package

Applications

  • Computers and peripherals
  • Audio and video equipment
  • Cellular handsets and accessories
  • Portable electronics
  • Communication systems

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PESD9X7.0L PESD9X7.0L,315
(934065229315)
Obsolete no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PESD9X7.0L PESD9X7.0L,315 PESD9X7.0L rohs rhf rhf
Quality and reliability disclaimer

Documentation (2)

File name Title Type Date
PESD9XXL_SER Unidirectional ESD protection diodes Data sheet 2022-05-03
PESD9X7_0L PESD9X7 0L SPICE model SPICE model 2024-08-12

Support

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Models

File name Title Type Date
PESD9X7_0L PESD9X7 0L SPICE model SPICE model 2024-08-12

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.