- Block diagram
- Design considerations
- Product listing
- Support
Block diagram
Recovery / Schottky rectifier
Recommended products (2)
P-channel MOSFET
Recommended products (1)
MOSFET gate protection
Recommended products (1)
N-channel MOSFET
Recommended products (1)
TVS diode
Recommended products (1)
Safety switch
Recommended products (1)
Gate signal conditioning
Ideal diode
Recommended products (1)
Select a component
To view more information about the Nexperia components used in this application, please select a component above or click on a component (highlighted in blue) in the block diagram.
Design considerations
- Series diodes (PN or Schottky): Simple, low cost adn requires minimal design effort, but offers reduced efficiency at higher currents and suffers from forward voltage drop and power loss
- P-channel MOSFET (high-side): Low voltage drop, simple gate drive and good efficiency, but higher RDS(on) than N-channel devices and limited high-current performance
- N-channel MOSFET (high-side or low-side): Very low RDS(on), high current capability and high efficiency, but requires gate drive or charge pump and typically has increased circuit complexity
- Ideal diode (MOSFET-based): Minimal voltage drop, fast reverse-current blocking and best thermal performance but incread BoM costs and design complexity