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PMZ270XN

N-channel TrenchMOS extremely low level FET

Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued

Alternatives

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Saves PCB space due to small footprint (90 % smaller than SOT23)
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for use in compact designs due to low profile (55 % lower than SOT23)

Applications

  • Driver circuits
  • Switching in portable appliances

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMZ270XN SOT883 DFN1006-3 End of life N 1 20 12 340 150 2.15 0.18 0.72 2.5 1 N 34 12 2011-01-24

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PMZ270XN PMZ270XN,315
(934060155315)		 Obsolete SOT883
DFN1006-3
(SOT883) 		SOT883 REFLOW_BG-BD-1
SOT883_315

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PMZ270XN PMZ270XN,315 PMZ270XN rohs rhf rhf
Quality and reliability disclaimer

Series

Documentation (16)

File name Title Type Date
PMZ270XN N-channel TrenchMOS extremely low level FET Data sheet 2008-02-20
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT883 3D model for products with SOT883 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1006-3_SOT883_mk plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Marcom graphics 2017-01-28
SOT883 plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Package information 2022-05-20
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMZ270XN_4_4_2011 PMZ270XN_4_4_2011 Spice parameter SPICE model 2011-08-21
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PMZ270XN_4_4_2011 PMZ270XN_4_4_2011 Spice parameter SPICE model 2011-08-21
SOT883 3D model for products with SOT883 package Design support 2020-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet