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PSMN047-100NSE

N-channel 100 V 48 mOhm standard level MOSFET in DFN2020 package, designed specifically for high power PoE applications

New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90 W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of “soft-start”, thermal management and power density requirements. PSMN047-100NSE is designed specifically for high power PoE applications.

Features and benefits

  • Enhanced safe operating area (SOA) for superior linear mode operation
  • Low RDSon for low I²R conduction losses
  • 2 mm x 2 mm space-saving DFN2020 package, 60% smaller than LFPAK33
  • Very low IDSS leakage

Applications

  • High power PoE applications (60 W and higher)
  • IEEE802.3at and proprietary PoE solutions
  • Fault tolerant load switch - Inrush management and eFuse applications
  • Battery management applications

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN047-100NSESOT1220-2DFN2020M-6DevelopmentN110048175141.47.23821.92.6N5071112021-06-16

Documentation (3)

File nameTitleTypeDate
PSMN047-100NSEN-channel 100 V 48 mOhm standard level MOSFET in DFN2020 package, designed specifically for high power PoE applicationsData sheet2021-06-21
sot1220-2_3d_logosot1220-2_3d logoLogo2021-06-23
sot1220-2_3dDFN2020M-6: plastic thermal enhanced unltra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mmOutline 3d2021-06-10

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