Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

MLPAK56 MOSFETs

The 5 × 6 mm SO8 footprint is the industry standard for power MOSFETs. The MLPAK56 MOSFET family delivers optimized RDS(on) in a space-efficient micro-lead package, making it ideal for space-constrained consumer, industrial, computing, and mobile designs. The portfolio spans both N-channel and P-channel variants, with automotive-grade (AEC-Q101) options available.

Key features and benefits

  • Compact 30 mm² footprint
  • Industry standard 5 × 6 mm package for easy PCB integratin
  • Optimized cost-to-performance balance
  • Micro-leads for solder wettability
  • Exposed heat sink for low thermal resistance
  • Low RDS(on) down to 2.8 mΩ 
  • 30 V, 60 V and 100 V devices
  • N- & P-channel, standard & logic-level variants
  • AEC-Q101 side-wettable (-WF) package available

Applications

  • Brushless DC motor control
  • DC to DC solutions 
  • Low-power adaptors
  • PC power supplies
  • Power tools (battery powered)

Products

Automotive qualified products (AEC-Q100/Q101)

Type number Description Status Quick access
BUK9R4R5-40H Logic level N-Channel MOSFET in MLPAK56-WF (SOT8038-2) Production

MOSFETs

Type number Description Status Quick access
BUK9R4R5-40H Logic level N-Channel MOSFET in MLPAK56-WF (SOT8038-2) Production
PXN2R8-100RL N-channel 100 V, 2.8 mOhm, logic level Trench MOSFET in MLPAK56 Production
PXN2R9-100RS N-channel 100 V, 2.9 mOhm, standard level Trench MOSFET in MLPAK56 Production
PXN4R1-60RLA N-channel 60 V, 4.1 mOhm, logic level Trench MOSFET in MLPAK56 Development
PXN5R0-60RLA N-channel 60 V, 5.0 mOhm, logic level Trench MOSFET in MLPAK56 Development
PXN5R9-60RLA N-channel 60 V, 5.9 mOhm, logic level Trench MOSFET in MLPAK56 Development
PXN7R3-60RLA N-channel 60 V, 7.3 mOhm, logic level Trench MOSFET in MLPAK56 Development

Documentation

File name Title Type Date
AN11304.pdf MOSFET load switch PCB with thermal measurement Application note 2013-01-28
AN11119.pdf Medium power small-signal MOSFETs in DC-to-DC conversion Application note 2013-05-07
AN11599.pdf Using power MOSFETs in parallel Application note 2016-07-13
AN10441.pdf Level shifting techniques in I2C-bus design Application note 2020-02-11
AN90017.pdf Load switches for mobile and computing applications Application note 2020-09-02
AN11156.pdf Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158_ZH.pdf Understanding power MOSFET data sheet parameters Application note 2021-01-04
SOT8002_1.step 3D model for products with SOT8002-1 package Design support 2021-04-30
AN90032.pdf Low temperature soldering, application study Application note 2022-02-22
AN50014.pdf Understanding the MOSFET peak drain current rating Application note 2022-03-28
AN50006_JP.pdf リニアモードにおけるパワーMOSFET Application note 2022-06-06
AN10273.pdf Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN50005_translated_20230317.pdf 大電力アプリケーションにおけるパワーMOSFETの並列接続 Application note 2023-04-03
MLPAK56_combi.png MLPAK56 MARCOM image Marcom graphics 2023-10-17
vp_MLPAK56_MOSFETs.zip MLPAK56 MOSFETs Value proposition 2024-10-06
AN90001.pdf Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
AN11243.pdf Failure signature of Electrical Overstress on Power MOSFETs Application note 2025-03-20
AN11160.pdf Designing RC Snubbers Application note 2025-08-15
AN90011.pdf Half-bridge MOSFET switching and its impact on EMC Application note 2025-08-15
AN11158.pdf Understanding power MOSFET data sheet parameters Application note 2025-09-01
AN11261.pdf RC Thermal Models Application note 2025-09-01
AN50019.pdf Thermal boundary condition study on MOSFET packages and PCB substrates Application note 2025-09-01
AN90059.pdf Power MOSFET gate driver fundamentals Application note 2025-09-01

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