Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC power devices

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

BUK217-50Y

BUK217-50Y End of life

Single channel high-side TOPFET(tm)

Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic package.

Product availability:

BUK212-50Y in SOT263B-01

BUK217-50Y in SOT426 (D²-PAK).

  • Product details
  • Documentation
  • Support
  • Interactive data sheet

Product details

Features and benefits

  • Very low quiescent current
  • Power TrenchMOS™
  • Overtemperature protection
  • Over and undervoltage protection
  • Reverse battery protection
  • Low charge pump noise
  • Loss of ground protection
  • CMOS logic capability
  • Negative load clampin
  • Overload protection
  • ESD protection for all pins
  • Diagnostic status indication
  • Operating voltage down to 5.5 V
  • Current limitation.

Applications

  • 12 V and 24 V grounded loads
  • Inductive loads
  • High inrush current loads
  • Replacement for relays and fuses.

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Interactive data sheet

How does it work?

The interactive data sheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive data sheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive data sheet