Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC power devices

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

SiC power devices

Efficient, robust Silicon Carbide (SiC) power for high-voltage applications

Addressing the growing demand for efficient, high-voltage power devices, Nexperia’s Silicon Carbide (SiC) diodes and MOSFETs help designers achieve higher system efficiency, increased power density and robust switching performance. From 650 V to 1200 V, SiC technology reduces switching losses, supports higher-frequency operation and eases thermal management, making it a strong choice for power supplies, charging systems, inverters and motor drives for automotive, AI and dataserver, green energy and other applications.

Key features and benefits

  • Lower switching losses to improve overall system efficiency
  • Higher switching frequency capability to support smaller magnetics and more compact designs
  • Improved thermal performance to ease cooling requirements and reduce system heat
  • Higher power density to help shrink converter, inverter and charger designs
  • Robust high-voltage operation for demanding industrial, energy and e-mobility applications

Key applications

Version Name Description Mounting method Surface mount Pins Pitch (mm) Footprint area (mm²) PDF

Nexperia Explainers

Lowest threshold voltage tolerance - Understanding Nexperia 1200 V SiC MOSFETs

Robust, low forward voltage body diode - Understanding Nexperia 1200 V SiC MOSFETs

Superior gate charge ratio - Understanding Nexperia 1200 V SiC MOSFETs

Best-in-class RDSon temperature stability - Understanding Nexperia 1200 V SiC MOSFETs

MPS Silicon Carbide Power Diodes Explained – SiC Basics

Thin Silicon Carbide Explained – SiC Basics

Power Semiconductors Explained – SiC Basics

Silicon Carbide Explained – SiC Basics

Switching Performance of Silicon Carbide vs. Silicon Diodes – SiC Basics

Promotional Videos

Nexperia's 1200 V SiC MOSFETs - the perfect choice for innovative high power applications

Nexperia: Your Trusted Supplier for Silicon Carbide (SiC) Solutions

Introducing Nexperia 1200 V Silicon Carbide MOSFETs

Nexperia’s Silicon Carbide diodes featuring Merged PiN Schottky technology

Technology and Design Insights

Meeting the high-voltage & power requirements of next-generation applications

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.


Cross reference