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Click here for more informationPDTC115EE
NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
NPN resistor equipped transistor (see �Simplified outline, symbol and pinning� for package details).
Features and benefits
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
AEC-Q101 qualified
Applications
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
Documentation (3)
| File name | Title | Type | Date |
|---|---|---|---|
| PDTC115E_SERIES | NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm | Data sheet | 2010-02-08 |
| LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
| PDTC115EE | PDTC115EE SPICE model | SPICE model | 2025-05-31 |
Support
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Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| PDTC115EE | PDTC115EE SPICE model | SPICE model | 2025-05-31 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.