Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PESD12VS2UAT

Double ESD protection diode in SOT23 package

Unidirectional double ESD protection diode in common cathode configuration in a small SOT23 Surface-Mounted Device (SMD) plastic package, designed to protect up to two data lines against damage from ElectroStatic Discharge (ESD) and other transients.

This product has been discontinued

Features and benefits

  • Unidirectional ESD protection of up to two lines
  • Common-cathode configuration
  • Max. peak pulse power: Ppp = 180 W at tp = 8/20 µs
  • Ultra-low reverse leakage current: IRM = 1 nA
  • ESD protection: 30 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC 61000-4-5 (surge); Ipp = 5 A at tp = 8/20 µs

Applications

  • Computers and peripherals
  • Communication systems
  • Audio and video equipment
  • Data lines

Documentation (1)

File name Title Type Date
PESD12VS2UAT PESD12VS2UAT SPICE model SPICE model 2025-04-07

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


Models

File name Title Type Date
PESD12VS2UAT PESD12VS2UAT SPICE model SPICE model 2025-04-07

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.