Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PESD5V0V4UG

PESD5V0V4UG End of life

Very low capacitance unidirectional quadruple ESD protection diode arrays

Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients.

  • Product details
  • Documentation
  • Support
  • Interactive datasheet

Product details

Features and benefits

  • ESD protection of up to four lines
  • Ultra low leakage current: IRM = 25 nA
  • Very low diode capacitance
  • ESD protection up to 12 kV
  • Max. peak pulse power: PPP = 16 W
  • IEC 61000-4-2; level 4 (ESD)
  • Low clamping voltage: VCL = 11 V
  • IEC 61000-4-5 (surge); IPP = 1.5 A

Applications

  • Computers and peripherals
  • Communication systems
  • Audio and video equipment
  • Portable electronics
  • Cellular handsets and accessories
  • Subscriber Identity Module (SIM) card protection

Register once, drag and drop ECAD models into your CAD tool and speed up your design.

More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet