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PMCM650VNE

12 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

This product has been discontinued, click here for discontinuation information and replacement parts.

Features and benefits

  • Low threshold voltage
  • Ultra small package: 0.98 × 1.48 × 0.35 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) integrated gate-source ESD protection diodes Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMCM650VNE OL-PMCM650VNE WLCSP6 End of life N 1 12 8 25 32 Y 150 8.4 3.6000001 15.4 0.556 0.6 N 1060 330 2015-04-07

Package

All type numbers in the table below are discontinued. See the table Discontinuation information for more information.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PMCM650VNE PMCM650VNEZ
(934068627023)
Obsolete no package information
PMCM650VNEF
(934068627135)
Obsolete

Environmental information

All type numbers in the table below are discontinued. See the table Discontinuation information for more information.

Type number Orderable part number Chemical content RoHS RHF-indicator
PMCM650VNE PMCM650VNEZ PMCM650VNE rohs rhf rhf
PMCM650VNE PMCM650VNEF PMCM650VNE rohs rhf rhf
Quality and reliability disclaimer

Documentation (8)

File name Title Type Date
PMCM650VNE 12 V, N-channel Trench MOSFET Data sheet 2017-05-19
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
nexperia_document_leaflet_WLCSP_201803 Small-signal MOSFETs in WLCSP - Smallest size - lowest RDS(on) Leaflet 2018-04-25
nexperia_document_leaflet_WLCSP_201803_CHN WLCSP Chinese Translation Leaflet 2018-04-25
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12

Support

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Models

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.