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74CB3Q3253PW

Dual 1-of-4 FET multiplexer/demultiplexer with charge pump

The 74CB3Q3253 is a dual high-bandwidth single-pole, quad-throw FET bus switch. Each switch features a select input (Sn) and an output enable input (nOE). The switch is disabled when the nOE input is HIGH. An internal charge-pump increases the gate voltage of the NMOS pass transistor. The result is improved RON and RON(flat) performance and the ability to switch 5 V signals when VCC = 3.3 V.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
74CB3Q3253PW 74CB3Q3253PWJ 935339209118 SOT403-1 Order product

Features and benefits

  • Wide supply voltage range from 2.3 V to 3.6 V

  • Overvoltage switching on switch ports:

    • 0 V to 5 V switching with VCC = 2.5 V

    • 0 V to 5 V switching with VCC = 3.3 V

  • Switch voltage accepts signals up to 5.5 V

  • 4 Ω (typical) ON resistance

  • 3.5 pF (typical) OFF-state capacitance

  • High bandwidth 0.5 GHz (maximum)

  • Low input/output capacitance minimizes loading and signal distortion

  • Fast switching frequency fmax = 20 MHz (maximum)

  • Low power consumption ICC = 0.4 mA (typical)

  • Control inputs can be driven by TTL or 5 V/3.3 V CMOS outputs

  • IOFF supports partial power-down mode operation

  • Latch-up performance exceeds 100 mA per JESD 78E Class II Level A

  • ESD protection:

    • HBM ANSI/ESDA/JEDEC JS-001-2012 Class 2 exceeds 2 kV

    • CDM JESD22-C101F exceeds 1000 V

  • Specified from -40 °C to +85 °C

Applications

  • Communication infrastructure

  • Bus isolation

  • Memory interleaving

  • Sensor multiplexing

Parametrics

Type numberProduct statusVCC (V)VPASS (V)Logic switching levelsRON (Ω)f(-3dB) (MHz)Nr of bitstpd (ns)Power dissipation considerationsTamb (°C)Rth(j-a) (K/W)Ψth(j-top) (K/W)Rth(j-c) (K/W)Package name
74CB3Q3253PWProduction2.3 - 3.6VccCMOS/LVTTL4-20.2very low-40~851162.444.3TSSOP16

(-) dash denotes: "Parameter value not specified for this product"

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
74CB3Q3253PW74CB3Q3253PWJ
( 9353 392 09118 )
ActiveB3Q3253
TSSOP16
(SOT403-1)
SOT403-1SSOP-TSSOP-VSO-WAVE
SOT403-1_118

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
74CB3Q3253PW74CB3Q3253PWJ74CB3Q3253PW
Quality and reliability disclaimer

Documentation (6)

File nameTitleTypeDate
74CB3Q3253Dual 1-of-4 FET multiplexer/demultiplexer with charge pumpData sheet2021-06-28
cb3q3253 IBIS model of 74CB3Q3253IBIS model2017-08-24
Nexperia_document_leaflet_CB3Q_switches_201803CB3Q Bus SwitchesLeaflet2018-04-06
74CB3Q3253PW_Nexperia_Product_Reliability74CB3Q3253PW Nexperia Product ReliabilityQuality document2023-05-29
SSOP-TSSOP-VSO-WAVEFootprint for wave solderingWave soldering2009-10-08
SOT403-1_118TSSOP16; Reel pack for SMD, 13"; Q1/T1 product orientationPacking information2020-02-14

Support

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Models

File nameTitleTypeDate
cb3q3253 IBIS model of 74CB3Q3253IBIS model2017-08-24

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
74CB3Q3253PW74CB3Q3253PWJ935339209118SOT403-1_118- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.