Key features and benefits
Headlight and rear light clusters can be illuminated by strings of LEDs controlled by a dedicated driver configured in a boost or boost/buck DCDC converter topology. The power dissipation of individual LED strings can reach >40W in a confined space, so MOSFETs with good switching performance combined with low on-state losses are required. Due to the space constraints and often limited heat sinking, products with low thermal impedance are also desirable. The longer the string of series connected LEDs the greater the VDS of the MOSFET required to control them.
Interior lights and backlit LCD where the power requirements are lower can be addressed by our large portfolio of LFPAK56 and LFPAK56D devices.
LFPAK56 (Single & Dual Power-SO8) MOSFETs are ideally suited to provide compact and thermally stable solutions for automotive lighting applications.
- Robust product using advanced copper clip technology
- Low on-state losses
- Low switching losses
- Compact footprint
|Type number||Description||Status||Quick access|
|BUK9K25-40E||Dual N-channel 40 V, 29 mΩ logic level MOSFET||Production|
|BUK9K29-100E||Dual N-channel TrenchMOS logic level FET||Production|
|BUK9K45-100E||Dual N-channel TrenchMOS logic level FET||Production|
|BUK9M23-80E||N-channel 80 V, 23 mΩ logic level MOSFET in LFPAK33||Production|
|BUK9M35-80E||N-channel 80 V, 35 mΩ logic level MOSFET in LFPAK33||Production|
|BUK9Y25-80E||N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56||Production|
|BUK9Y29-40E||N-channel 40 V, 29 mΩ logic level MOSFET in LFPAK56||Production|
|BUK9Y38-100E||N-channel 100 V, 38 mΩ logic level MOSFET in LFPAK56||Production|
|BUK9Y41-80E||N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56||Production|
|BUK9Y59-60E||N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56||Production|