650 V, 50 mΩ Gallium Nitride (GaN) FET
Buy from Nexperia
| SKU | Stock* | MOQ | Price per unit** | Quantity |
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Buy from distributors
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia
Features and benefits
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Ultra-low reverse recovery charge
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Simple gate drive (0 V to +10 V or 12 V)
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Robust gate oxide (±20 V capability)
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High gate threshold voltage (+4 V) for very good gate bounce immunity
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Very low source-drain voltage in reverse conduction mode
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Transient over-voltage capability (800 V)
Applications
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Hard and soft switching converters for industrial and datacom power
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Bridgeless totempole PFC
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PV and UPS inverters
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Servo motor drives
Parametrics
| Type number | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN063-650WSA | SOT429 | TO-247-3 | Production | cascode | N | 1 | 650 | 60 | 175 | 34.5 | 4 | 15 | 143 | 125 | 3.9 | N | 1000 | 130 | 2019-11-17 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Package
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| GAN063-650WSA | GAN063-650WSAQ ( 9346 600 22127 ) | Active | GAN063 650WSA |  TO-247-3 (SOT429) | SOT429 | SOT429_127 |
Environmental information
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| GAN063-650WSA | GAN063-650WSAQ | GAN063-650WSA |  |  |
Documentation (19)
| File name | Title | Type | Date |
|---|---|---|---|
| GAN063-650WSA | 650 V, 50 mOhm Gallium Nitride (GaN) FET | Data sheet | 2020-07-31 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| AN90030_translated | ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
| GAN063-650WSA | GAN063-650WSA SPICE model | SPICE model | 2019-02-18 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| GAN063-650WSA_RC_thermal_Model | GAN063-650WSA RC thermal Model | Thermal design | 2019-02-18 |
| GaN063-650WSA | GaN041-650WSA Foster thermal model | Thermal model | 2021-04-02 |
| GAN063-650WSA_Cauer | GAN063-650WSA Cauer thermal model | Thermal model | 2021-04-07 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| SOT429_127 | TO-247; Tube pack; Standard product orientation | Packing information | 2019-12-17 |
Support
If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| GAN063-650WSA | GAN063-650WSA SPICE model | SPICE model | 2019-02-18 |
| GAN063-650WSA_RC_thermal_Model | GAN063-650WSA RC thermal Model | Thermal design | 2019-02-18 |
| GaN063-650WSA | GaN041-650WSA Foster thermal model | Thermal model | 2021-04-02 |
| GAN063-650WSA_Cauer | GAN063-650WSA Cauer thermal model | Thermal model | 2021-04-07 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Ordering, pricing & availability
| Type number | Orderable part number | Ordering code (12NC) | Packing | Packing quantity | Buy online |
|---|---|---|---|---|---|
| GAN063-650WSA | GAN063-650WSAQ | 934660022127 | SOT429_127 | - | Order product |
Sample
As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.