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650 V, 50 mΩ Gallium Nitride (GaN) FET

The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
GAN063-650WSA GAN063-650WSAQ 934660022127 SOT429 Order product

Features and benefits

  • Ultra-low reverse recovery charge
  • Simple gate drive (0 V to +10 V or 12 V)
  • Robust gate oxide (±20 V capability)
  • High gate threshold voltage (+4 V) for very good gate bounce immunity
  • Very low source-drain voltage in reverse conduction mode
  • Transient over-voltage capability (800 V)


  • Hard and soft switching converters for industrial and datacom power
  • Bridgeless totempole PFC
  • PV and UPS inverters
  • Servo motor drives


Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
( 9346 600 22127 )
ActiveGAN063 650WSA
SOT429Horizontal, Rail Pack

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHS / RHFMSLMSL leadfree
Quality and reliability disclaimer

Documentation (10)

File nameTitleTypeDate
GAN063-650WSA650 V, 50 mOhm Gallium Nitride (GaN) FETData sheet2020-07-31
AN90005Understanding Power GaN FET data sheet parametersApplication note2020-06-08
nexperia_brochure_gan_202006Nexperia GaN FETs brochureBrochure2020-06-04
GAN063-650WSA_v07_3GAN063-650WSA SPICE modelSPICE model2019-02-18
TN00008Power MOSFET frequently asked questions and answersTechnical note2020-06-24
GAN063-650WSA_RC_thermal_ModelGAN063-650WSA RC thermal ModelThermal design2019-02-18
nexperia_whitepaper_gan_robustness_aecq101White paper: GaN FET technology and the robustness needed for AEC-Q101 qualificationWhite paper2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CNWhitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性)White paper2020-07-15
nexperia_whitepaper_gan_need_for_efficient_conversionWhite paper: Power GaN technology: the need for efficient power conversionWhite paper2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN白皮书: 功率GaN技术: 高效功率转换的需求White paper2020-08-17


If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.


File nameTitleTypeDate
GAN063-650WSA_v07_3GAN063-650WSA SPICE modelSPICE model2019-02-18
GAN063-650WSA_RC_thermal_ModelGAN063-650WSA RC thermal ModelThermal design2019-02-18

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingBuy online
GAN063-650WSAGAN063-650WSAQ934660022127Horizontal, Rail PackOrder product


As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store:

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.