650 V, 50 mΩ Gallium Nitride (GaN) FET
Buy from Nexperia
| SKU | Stock* | MOQ | Price per unit** | Quantity |
|---|
Buy from distributors
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
* Stock values are subject to change
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia
Features and benefits
- Ultra-low reverse recovery charge
- Simple gate drive (0 V to +10 V or 12 V)
- Robust gate oxide (±20 V capability)
- High gate threshold voltage (+4 V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode
- Transient over-voltage capability (800 V)
Applications
- Hard and soft switching converters for industrial and datacom power
- Bridgeless totempole PFC
- PV and UPS inverters
- Servo motor drives
Parametrics
| Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN063-650WSA | SOT429 | TO-247 | Production | N | 1 | 650 | 60 | 175 | 34.5 | 4 | 15 | 143 | 125 | 3.9 | N | 1000 | 130 | 2019-11-17 |
Package
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| GAN063-650WSA | GAN063-650WSAQ ( 9346 600 22127 ) | Active | GAN063 650WSA |  TO-247 (SOT429) | SOT429 | Horizontal, Rail Pack |
Environmental information
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| GAN063-650WSA | GAN063-650WSAQ | GAN063-650WSA |  |  |
Documentation (17)
| File name | Title | Type | Date |
|---|---|---|---|
| GAN063-650WSA | 650 V, 50 mOhm Gallium Nitride (GaN) FET | Data sheet | 2020-07-31 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| Nexperia_document_brochure_GaN_2021 | Nexperia_document_brochure_GaN_2021 | Brochure | 2021-05-18 |
| Nexperia_document_brochure_GaN_CHN | 高功率氮化镓场效应晶体管 | Brochure | 2021-05-28 |
| GAN063-650WSA | GAN063-650WSA SPICE model | SPICE model | 2019-02-18 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| GAN063-650WSA_RC_thermal_Model | GAN063-650WSA RC thermal Model | Thermal design | 2019-02-18 |
| GaN063-650WSA | GaN041-650WSA Foster thermal model | Thermal model | 2021-04-02 |
| GAN063-650WSA_Cauer | GAN063-650WSA Cauer thermal model | Thermal model | 2021-04-07 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
Support
If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| GAN063-650WSA | GAN063-650WSA SPICE model | SPICE model | 2019-02-18 |
| GAN063-650WSA_RC_thermal_Model | GAN063-650WSA RC thermal Model | Thermal design | 2019-02-18 |
| GaN063-650WSA | GaN041-650WSA Foster thermal model | Thermal model | 2021-04-02 |
| GAN063-650WSA_Cauer | GAN063-650WSA Cauer thermal model | Thermal model | 2021-04-07 |
Ordering, pricing & availability
| Type number | Orderable part number | Ordering code (12NC) | Packing | Packing quantity | Buy online |
|---|---|---|---|---|---|
| GAN063-650WSA | GAN063-650WSAQ | 934660022127 | Horizontal, Rail Pack | - | Order product |
Sample
As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.