- Ultra-low reverse recovery charge
- Simple gate drive (0 V to +10 V or 12 V)
- Robust gate oxide (±20 V capability)
- High gate threshold voltage (+4 V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode
- Transient over-voltage capability (800 V)
- Hard and soft switching converters for industrial and datacom power
- Bridgeless totempole PFC
- PV and UPS inverters
- Servo motor drives
|GAN063-650WSA||650 V, 50 mÎ© Gallium Nitride (GaN) FET||Data sheet||2020-03-20|
|AN90005||Understanding Power GaN FET data sheet parameters||Application note||2019-11-15|
|GAN063-650WSA_v07_3||GAN063-650WSA SPICE model||SPICE model||2019-02-18|
|TN00008||Power MOSFET frequently asked questions and answers||Technical note||2018-09-12|
|GAN063-650WSA_RC_thermal_Model||GAN063-650WSA RC thermal Model||Thermal design||2019-02-18|
|SOT429_127||TO-247; Tube pack; Standard product orientation||Packing||2019-12-17|
|SOT429||plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body||Outline drawing||2019-08-26|
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Ordering, pricing & availability
|Type number||Orderable part number||Ordering code (12NC)||Packing||Buy online|
|GAN063-650WSA||GAN063-650WSAQ||934660022127||Horizontal, Rail Pack||Order product|
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