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GAN3R2-100CBE

100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)

The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
GAN3R2-100CBE GAN3R2-100CBEAZ 934665899341 WLCSP8-SOT8072 Order product

Features and benefits

  • Enhancement mode - normally-off power switch

  • Ultra high frequency switching capability

  • No body diode

  • Low gate charge, low output charge

  • Qualified for standard applications

  • ESD protection

  • RoHS, Pb-free, REACH-compliant

  • High efficiency and high power density

  • Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm

Applications

  • High power density and high efficiency power conversion

  • AC-to-DC converters, (secondary stage)

  • High frequency DC-to-DC converters in 48 V systems

  • Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

  • Datacom and telecom (AC-to-DC and DC-to-DC) converters

  • Motor drives

  • LiDAR (non-automotive)

  • Class D audio amplifiers

Parametrics

Type numberPackage versionPackage nameProduct statusConfigurationChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 5 V (mΩ)Tj [max] (°C)QGD [typ] (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
GAN3R2-100CBEWLCSP8-SOT8072WLCSP8Productione-modeN11003.21501.73941.1N10004602023-02-22

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
GAN3R2-100CBEGAN3R2-100CBEAZ
( 9346 658 99341 ) 		Active3R2DCBE
WLCSP8
(WLCSP8-SOT8072) 		WLCSP8-SOT8072WLCSP8-SOT8072_341

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
GAN3R2-100CBEGAN3R2-100CBEAZNot available
Quality and reliability disclaimer

Documentation (18)

File nameTitleTypeDate
GAN3R2-100CBE100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)Data sheet2023-04-27
AN90005Understanding Power GaN FET data sheet parametersApplication note2020-06-08
AN90004Probing considerations for fast switching applicationsApplication note2019-11-15
AN90006Circuit design and PCB layout recommendations for GaN FET half bridgesApplication note2019-11-15
AN90021Power GaN technology: the need for efficient power conversionApplication note2020-08-14
AN90041Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETsApplication note2023-05-09
WLCSP8-SOT80723D model for products with WLCSP8-SOT8072 packageDesign support2023-04-13
GAN3R2-100CBEGAN3R2-100CBE SPICE modelSPICE model2023-04-12
TN90004An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalabilityTechnical note2020-07-21
CauerModel_GAN3R2-100CBECauer model GAN3R2-100CBEThermal model2023-04-12
FosterModel_GAN3R2-100CBEFoster model GAN3R2-100CBEThermal model2023-04-12
GAN3R2-100CBEGAN3R2-100CBE RC thermal modelThermal model2023-04-12
GAN3R2-100CBE_CauerGAN3R2-100CBE Cauer modelThermal model2023-04-12
GAN3R2-100CBE_FosterGAN3R2-100CB Foster modelThermal model2023-04-12
nexperia_whitepaper_gan_need_for_efficient_conversionWhite paper: Power GaN technology: the need for efficient power conversionWhite paper2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN白皮书: 功率GaN技术： 高效功率转换的需求White paper2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion_JapaneseWhitepaper: GaN need for efficient conversion (Japanese)White paper2021-05-20
WLCSP8-SOT8072_341WLCSP8; Reel dry pack for SMD, 7"; Q2/T3 product orientationPacking information2023-04-18

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
WLCSP8-SOT80723D model for products with WLCSP8-SOT8072 packageDesign support2023-04-13
GAN3R2-100CBEGAN3R2-100CBE SPICE modelSPICE model2023-04-12
CauerModel_GAN3R2-100CBECauer model GAN3R2-100CBEThermal model2023-04-12
FosterModel_GAN3R2-100CBEFoster model GAN3R2-100CBEThermal model2023-04-12
GAN3R2-100CBEGAN3R2-100CBE RC thermal modelThermal model2023-04-12
GAN3R2-100CBE_CauerGAN3R2-100CBE Cauer modelThermal model2023-04-12
GAN3R2-100CBE_FosterGAN3R2-100CB Foster modelThermal model2023-04-12

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
GAN3R2-100CBEGAN3R2-100CBEAZ934665899341WLCSP8-SOT8072_341- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet