Features and benefits
- Optimised for fast switching, low spiking, high efficiency
- Low QG x RDSon FOM for high efficiency switching applications
- Low body diode losses (Qrr) and fast recovery (trr)
- Strong avalanche energy rating (EAS)
- Avalanche rated & 100% tested
- Ha-free & RoHS compliant TO220 package
Applications
- Synchronous rectification in AC-to-DC and DC-to-DC applications
- Brushed & BLDC motor control
- UPS & solar inverter
- LED lighting
- Battery protection
- Full-bridge & half-bridge applications
- Flyback & resonant topologies
Parametrics
Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN8R5-100PSF NRND | SOT78 | TO-220AB | End of life | N | 1 | 100 | 8.7 | 175 | 98 | 8.7 | 44.5 | 183 | 70 | 3.1 | N | 3181 | 551 | 2017-03-23 |
Package
All type numbers in the table below are discontinued. See the table Discontinuation information for more information.
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
PSMN8R5-100PSF NRND | PSMN8R5-100PSFQ ( 9340 704 02127 ) | Withdrawn / End-of-life | Standard Marking | ![]() TO-220AB (SOT78) | SOT78 | Horizontal, Rail Pack |
Discontinuation information
Type number | Orderable part number | Ordering code | Last time buy date | Last time delivery date | Replacement product | Status | Comments |
---|---|---|---|---|---|---|---|
PSMN8R5-100PSF NRND | PSMN8R5-100PSFQ | 934070402127 | 2019-12-31 | 2020-06-30 | No replacement | Full withdrawal |
Environmental information
All type numbers in the table below are discontinued. See the table Discontinuation information for more information.
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
---|---|---|---|---|
PSMN8R5-100PSF NRND | PSMN8R5-100PSFQ | Not available | ![]() |
Documentation (13)
File name | Title | Type | Date |
---|---|---|---|
PSMN8R5-100PSF | NextPower 100 V, 8.7 mΩ N-channel MOSFET in TO220 package | Data sheet | 2018-03-30 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11160 | Designing RC Snubbers | Application note | 2023-02-03 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2017-05-05 |
PSMN8R5-100PSF | SPICE mode PSMN8R5-100PSF | SPICE model | 2017-05-15 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
PSMN8R5-100PSF_RCthermal | PSMN8R5-100PSF thermal design | Thermal design | 2017-05-15 |
PSMN8R5-100PSF | Flow thermal model PSMN8R5-100PSF | Thermal model | 2017-05-15 |
Support
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Models
File name | Title | Type | Date |
---|---|---|---|
PSMN8R5-100PSF | SPICE mode PSMN8R5-100PSF | SPICE model | 2017-05-15 |
PSMN8R5-100PSF_RCthermal | PSMN8R5-100PSF thermal design | Thermal design | 2017-05-15 |
PSMN8R5-100PSF | Flow thermal model PSMN8R5-100PSF | Thermal model | 2017-05-15 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.