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PXP9R1-30QL

30 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic level compatible

  • Trench MOSFET technology

  • MLPAK33 package (3.3 x 3.3 mm footprint)

Applications

  • High-side load switch

  • Battery management

  • DC-to-DC conversion

  • Switching circuits

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PXP9R1-30QLSOT8002-1MLPAK33ProductionP1-309.112.8150-17.711.129574.89-1.4N28603202021-01-04

PCB Symbol, Footprint and 3D Model

Model NameDescription

Documentation (4)

File nameTitleTypeDate
AN11119Medium power small-signal MOSFETs in DC-to-DC conversionApplication note2013-05-07
AN11304MOSFET load switch PCB with thermal measurementApplication note2013-01-28
AN90017Load switches for mobile and computing applicationsApplication note2020-09-02
SOT8002_13D model for products with SOT8002-1 packageDesign support2021-04-30

Support

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Models

File nameTitleTypeDate
SOT8002_13D model for products with SOT8002-1 packageDesign support2021-04-30

PCB Symbol, Footprint and 3D Model

Model NameDescription

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.