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BSS84AKMB

50 V, single P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
BSS84AKMB BSS84AKMB,315 934065863315 SOT883B Order product

Features and benefits

  • Logic-level compatible

  • Very fast switching

  • Trench MOSFET technology

  • ESD protection up to 1 kV

  • Ultra thin package profile with 0.37 mm height

Applications

  • Relay driver

  • High-speed line driver

  • High-side load switch

  • Switching circuits

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)VGS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)integrated gate-source ESD protection diodesVESD HBM (V)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
BSS84AKMBSOT883BDFN1006B-3ProductionP1-502075008500Y1000150-0.230.090.36-1.6N244.52012-06-06

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
BSS84AKMBBSS84AKMB,315
( 9340 658 63315 )
Active0000 0010
DFN1006B-3
(SOT883B)
SOT883BREFLOW_BG-BD-1
SOT883B_315

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
BSS84AKMBBSS84AKMB,315BSS84AKMB
Quality and reliability disclaimer

Documentation (15)

File nameTitleTypeDate
BSS84AKMB50 V, single P-channel Trench MOSFETData sheet2020-10-27
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
nexperia_document_leaflet_SsMOS_for_mobile_2022High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packagesLeaflet2022-07-04
nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN适合移动和便携式设备的 大批量小信号MOSFET, 采用WLCSP和无引脚DFN封装Leaflet2022-07-04
BSS84AKMB_22_02_2012BSS84AKMB.22_02_2012 Spice parameterSPICE model2012-04-13
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
SOT883B_315DFN1006B-3; Reel pack for SMD, 7"; Q3/T4 product orientationPacking information2020-06-12
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
BSS84AKMB_22_02_2012BSS84AKMB.22_02_2012 Spice parameterSPICE model2012-04-13

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
BSS84AKMBBSS84AKMB,315934065863315SOT883B_315- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.