Features and benefits
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Very fast switching
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Trench MOSFET technology
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Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
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Exposed drain pad for excellent thermal conduction
Applications
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Charging switch for portable devices
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DC/DC converters
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Small brushless DC motor drive
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Power management in battery-driven portables
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Hard disc and computing power management
Parametrics
Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | integrated gate-source ESD protection diodes | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
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PMDPB70XP | SOT1118 | DFN2020-6 | Production | P | 2 | -30 | 12 | 87 | 110 | N | 150 | -3.8 | 0.95 | 0.49 | -0.7 | N | 680 | 54 | 2012-03-12 |
PCB Symbol, Footprint and 3D Model
Model Name | Description |
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Package
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
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PMDPB70XP | PMDPB70XP,115 ( 9340 660 54115 ) | Active | 1H | ![]() DFN2020-6 (SOT1118) | SOT1118 | REFLOW_BG-BD-1 | SOT1118_115 |
Environmental information
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
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PMDPB70XP | PMDPB70XP,115 | PMDPB70XP | ![]() |
Documentation (15)
File name | Title | Type | Date |
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PMDPB70XP | 30 V, dual P-channel Trench MOSFET | Data sheet | 2017-05-22 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
nexperia_report_aoi_inspection_dfn_201808 | Automatic Optical Inspection of DFN Components | Report | 2018-09-03 |
PMDPB70XP_23_01_2012 | PMDPB70XP_23_01_2012 Spice parameter | SPICE model | 2012-04-16 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
SOT1118_115 | DFN2020-6; Reel pack for SMD, 7''; Q2/T3 product orientation | Packing information | 2020-06-12 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
Support
If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.
Models
File name | Title | Type | Date |
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PMDPB70XP_23_01_2012 | PMDPB70XP_23_01_2012 Spice parameter | SPICE model | 2012-04-16 |
PCB Symbol, Footprint and 3D Model
Model Name | Description |
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Ordering, pricing & availability
Type number | Orderable part number | Ordering code (12NC) | Packing | Packing quantity | Buy online |
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PMDPB70XP | PMDPB70XP,115 | 934066054115 | SOT1118_115 | - | Order product |
Sample
As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.