Nexperia
Or cross multiple parts
×

PMDT290UCE

20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Not recommended for new automotive design-ins.

Alternatives

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
PMDT290UCE PMDT290UCEH 934065733125 SOT666 Order product
PMDT290UCE PMDT290UCE,115 934065733115 SOT666 Order product

Features and benefits

  • Very fast switching

  • Trench MOSFET technology

  • ESD protection up to 2 kV

Applications

  • Relay driver

  • High-speed line driver

  • Low-side loadswitch

  • Switching circuits

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)VGS [max] (V)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)integrated gate-source ESD protection diodesVESD HBM (V)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PMDT290UCESOT666SOT666ProductionN/P2208380620Y20001500.80.150.450.330.75N55152011-10-13

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
PMDT290UCEPMDT290UCEH
( 9340 657 33125 ) 		ActiveAF

(SOT666) 		SOT666REFLOW_BG-BD-1
SOT666_125
PMDT290UCE,115
( 9340 657 33115 ) 		ActiveAFSOT666_115

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
PMDT290UCEPMDT290UCEHPMDT290UCE
PMDT290UCEPMDT290UCE,115PMDT290UCE
Quality and reliability disclaimer

Documentation (14)

File nameTitleTypeDate
PMDT290UCE20/20 V, 800/550 mA N/P-channel Trench MOSFETData sheet2022-12-28
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
PMDT290UCEPMDT290UCE Spice parameterSPICE model2012-04-16
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
SOT666_125Tape reel SMD; reversed product orientation 12NC ending 125Packing information2020-04-27
SOT666_115Reel pack for SMD, 7"; Q2/T3 product orientationPacking information2020-06-12
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
PMDT290UCEPMDT290UCE Spice parameterSPICE model2012-04-16

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
PMDT290UCEPMDT290UCEH934065733125SOT666_125- Order product
PMDT290UCEPMDT290UCE,115934065733115SOT666_115- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet