30 V, single P-channel Trench MOSFET
Buy from Nexperia
| SKU | Stock* | MOQ | Price per unit** | Quantity |
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Buy from distributors
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
|---|
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia
Features and benefits
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Trench MOSFET technology
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Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
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Exposed drain pad for excellent thermal conduction
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Tin-plated 100 % solderable side pads for optical solder inspection
Applications
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Charging switch for portable devices
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DC-to-DC converters
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Power management in battery-driven portable devices
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Hard disk and computing power management
Parametrics
| Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | integrated gate-source ESD protection diodes | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMPB27EP | SOT1220 | DFN2020MD‑6 | Production | P | 1 | -30 | 20 | 29 | 43 | N | 150 | -8.8 | 3.8 | 19 | 1.7 | -1.5 | N | 1070 | 120 | 2012-09-10 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
Documentation (14)
| File name | Title | Type | Date |
|---|---|---|---|
| PMPB27EP | 30 V, single P-channel Trench MOSFET | Data sheet | 2017-05-04 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| nexperia_report_aoi_inspection_dfn_201808 | Automatic Optical Inspection of DFN Components | Report | 2018-09-03 |
| PMPB27EP_15_8_2012 | PMPB27EP Spice model | SPICE model | 2013-12-12 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
Support
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Models
| File name | Title | Type | Date |
|---|---|---|---|
| PMPB27EP_15_8_2012 | PMPB27EP Spice model | SPICE model | 2013-12-12 |
PCB Symbol, Footprint and 3D Model
| Model Name | Description |
|---|---|
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.