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PMXB65UPE

12 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
PMXB65UPE PMXB65UPEZ 934067151147 SOT1215 Order product

Features and benefits

  • Trench MOSFET technology

  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

  • Exposed drain pad for excellent thermal conduction

  • ElectroStatic Discharge (ESD) protection 1.5 kV HBM

  • Drain-source on-state resistance RDSon = 59 mΩ

  • Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V

Applications

  • High-side load switch and charging switch for portable devices

  • Power management in battery driven portables

  • LED driver

  • DC-to-DC converter

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)VGS [max] (V)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)integrated gate-source ESD protection diodesVESD HBM (V)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PMXB65UPESOT1215DFN1010D-3ProductionP1-1287298Y1500150-3.21.96.70.317-0.68N6341672014-02-04

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
PMXB65UPEPMXB65UPEZ
( 9340 671 51147 )
Active01" 10 00
DFN1010D-3
(SOT1215)
SOT1215REFLOW_BG-BD-1
SOT1215_147

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
PMXB65UPEPMXB65UPEZPMXB65UPE
Quality and reliability disclaimer

Documentation (12)

File nameTitleTypeDate
PMXB65UPE12 V, P-channel Trench MOSFETData sheet2017-05-04
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
nexperia_document_leaflet_SsMOS_for_mobile_2022High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packagesLeaflet2022-07-04
nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN适合移动和便携式设备的 大批量小信号MOSFET, 采用WLCSP和无引脚DFN封装Leaflet2022-07-04
PMXB65UPE_14_11_2013PMXB65UPE Spice modelSPICE model2013-12-12
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
SOT1215_147DFN1010D-3; Reel pack, SMD, 7"; Q2/T3 standard product orientation; Orderable part number ending ,147 or Z; Ordering code (12NC) ending 147Packing information2020-04-21
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
PMXB65UPE_14_11_2013PMXB65UPE Spice modelSPICE model2013-12-12

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
PMXB65UPEPMXB65UPEZ934067151147SOT1215_147- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.