Allegro AHV85110 half-bridge GaN FET driver-switch
Allegro MicroSystems' half-bridge driver-switch demonstration board APEK85110KNH-05-T-MH contains two Gallium Nitride (GaN) FET drivers and two Nexperia GAN080-650EBE 650 V, 80 mΩ GaN FETs in the DFN8080-8 package. It can be used to perform double-pulse tests or to interface the half bridge to an existing LC power section.
Key features & benefits
- Isolated APEK85110KNH driver does not require secondary side power or bootstrap components.
- The GAN080-650EBE is a normally-off e-mode device offering superior performance in terms of efficiency and power density
- Low gate charge, low output charge pure GaN die solution housed in a low inductance and low resistance package to get a device with a very high frequency switching capabilies
More information
Products on the board (1)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
GAN080-650EBE | 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package | Production |
Products on the board (1)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
|
GAN080-650EBE | 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package | Production |
Documentation (0)
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