Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PBSS5160V

PBSS5160V End of life

60 V, 1 A PNP low V_CEsat (BISS) transistor

PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package.

NPN complement: PBSS4160V.

  • Product details
  • Documentation
  • Support
  • Interactive datasheet

Product details

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency leading to less heat generation
  • Reduces printed-circuit board area required
  • Cost effective replacement for medium power transistors BCP52 and BCX52

Applications

  • Major application segments
    • Telecom infrastructure
    • Industrial
  • Power management
    • DC-to-DC conversion
    • Supply line switching
  • Peripheral driver
    • Driver in low supply voltage applications (e.g. lamps and LEDs)
    • Inductive load driver (e.g. relays, buzzers and motors)

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More information

Quality and reliability disclaimer

Support

Please contact us if you have any questions. If you are in need of design support, please fill in the technical support form, we will get back to you shortly.

Please visit our engineer exchange forum or contact us for further support.

Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

Interactive datasheet

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet