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GAN039-650NTB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
GAN039-650NTB GAN039-650NTBZ 934662153139 SOT8005 Order product

Features and benefits

  • Simplified driver design as standard level MOSFET gate drivers can be used:

    • 0 V to 12 V drive voltage

    • Gate threshold voltage VGSth of 4 V

  • Robust gate oxide with ±20 V VGS rating

  • High gate threshold voltage of 4 V for gate bounce immunity

  • Low body diode Vf for reduced losses and simplified dead-time adjustments

  • Transient over-voltage capability for increased robustness

  • CCPAK package technology:

    • Improved reliability, with reduced Rth(j-mb) for optimal cooling

    • Lower inductances for lower switching losses and EMI

    • 150 °C maximum junction temperature

    • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment

    • Easy solder wetting for good mechanical solder joints

Applications

  • Hard and soft switching converters for industrial and datacom power

  • Bridgeless totempole PFC

  • PV and UPS inverters

  • Servo motor drives

Parametrics

Type numberPackage versionPackage nameProduct statusConfigurationChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
GAN039-650NTBSOT8005CCPAK1212iProductioncascodeN16503915058.55262501873.9N19801442020-07-30

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
GAN039-650NTBGAN039-650NTBZ
( 9346 621 53139 ) 		Active039INTB
CCPAK1212i
(SOT8005) 		SOT8005SOT8005_139

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
GAN039-650NTBGAN039-650NTBZGAN039-650NTB
Quality and reliability disclaimer

Documentation (16)

File nameTitleTypeDate
GAN039-650NTB650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i packageData sheet2023-11-30
AN90005Understanding Power GaN FET data sheet parametersApplication note2020-06-08
AN90004Probing considerations for fast switching applicationsApplication note2019-11-15
AN90006Circuit design and PCB layout recommendations for GaN FET half bridgesApplication note2019-11-15
AN90030Paralleling of Nexperia cascode GaN FETs in half-bridge topologyApplication note2023-03-22
AN90030_translatedハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列Application note2023-04-03
GAN039-650NxB_models_LTspiceGAN039-650NxB LTspice modelSPICE model2023-11-28
GAN039-650NxB_models_SIMetrixGAN039-650NxB SIMetrix SPICE modelSPICE model2023-11-28
TN90004An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalabilityTechnical note2020-07-21
UM90008NX-HB-GAN039-TSCUL 3.5 kW half-bridge evaluation board with top-side cooled GaN FETsUser manual2023-10-17
UM900244 kW analogue bridgeless totem-pole PFC evaluation boardUser manual2023-11-21
nexperia_whitepaper_gan_robustness_aecq101White paper: GaN FET technology and the robustness needed for AEC-Q101 qualificationWhite paper2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CNWhitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性)White paper2020-07-15
nexperia_whitepaper_gan_need_for_efficient_conversionWhite paper: Power GaN technology: the need for efficient power conversionWhite paper2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN白皮书: 功率GaN技术： 高效功率转换的需求White paper2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion_JapaneseWhitepaper: GaN need for efficient conversion (Japanese)White paper2021-05-20

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
GAN039-650NxB_models_LTspiceGAN039-650NxB LTspice modelSPICE model2023-11-28
GAN039-650NxB_models_SIMetrixGAN039-650NxB SIMetrix SPICE modelSPICE model2023-11-28

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
GAN039-650NTBGAN039-650NTBZ934662153139SOT8005_139- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet