GAN039-650NTB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

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SKU	Stock*	MOQ	Price per unit**	Quantity

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Seller	SKU	Stock	MOQ		1	10	100	1,000	10,000	Purchase

Seller	SKU	Stock	MOQ		1	10	100	1,000	10,000	Purchase

Seller	SKU	Stock	MOQ		1	10	100	1,000	10,000	Purchase

Seller	SKU	Stock	MOQ		1	10	100	1,000	10,000	Purchase

* Stock values are subject to change
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia

Features and benefits

Simplified driver design as standard level MOSFET gate drivers can be used:
- 0 V to 12 V drive voltage
- Gate threshold voltage V_GSth of 4 V
Robust gate oxide with ±20 V V_GS rating
High gate threshold voltage of 4 V for gate bounce immunity
Low body diode V_f for reduced losses and simplified dead-time adjustments
Transient over-voltage capability for increased robustness
CCPAK package technology:
- Improved reliability, with reduced R_th(j-mb) for optimal cooling
- Lower inductances for lower switching losses and EMI
- 175 °C maximum junction temperature
- High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
- Visual (AOI) soldering inspection, no need for expensive x-ray equipment
- Easy solder wetting for good mechanical solder joints

Applications

Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives

Parametrics

Type number	Package version	Package name	Product status	Channel type	Nr of transistors	V_DS [max] (V)	R_DSon [max] @ V_GS = 10 V (mΩ)	T_j [max] (°C)	I_D [max] (A)	Q_GD [typ] (nC)	Q_G(tot) [typ] @ V_GS = 10 V (nC)	P_tot [max] (W)	Q_r [typ] (nC)	V_GSth [typ] (V)	Automotive qualified	C_iss [typ] (pF)	C_oss [typ] (pF)	Date
GAN039-650NTB	SOT8005	CCPAK	Development	N	1	650	39	150	58.5	5	26	250	187	3.9	N	1980	144	2020-07-30

Package

Type number	Orderable part number, (Ordering code (12NC))	Status	Marking	Package	Package information	Reflow-/Wave soldering	Packing
GAN039-650NTB	GAN039-650NTBZ ( 9346 621 53139 )	Development	039INTBX	CCPAK (SOT8005)	SOT8005		Reel 13" Q4/T2

Quality, reliability & chemical content

Type number	Orderable part number	Chemical content	RoHS / RHF	MSL	MSL leadfree
GAN039-650NTB	GAN039-650NTBZ	Not available

Quality and reliability disclaimer

Documentation (5)

File name	Title	Type	Date
GAN039-650NTB	650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package	Data sheet	2021-04-19
nexperia_document_leaflet_GaN_CCPAK	CCPAK Power GaN FETs flyer	Leaflet	2020-08-17
nexperia_document_leaflet_CCPAK_2020_CHN	CCPAK Power GaN FETs flyer	Leaflet	2020-08-20
nexperia_whitepaper_gan_robustness_aecq101	White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification	White paper	2020-06-08
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN	白皮书: 功率GaN技术：高效功率转换的需求	White paper	2020-08-17

Support

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Ordering, pricing & availability

Type number	Orderable part number	Ordering code (12NC)	Packing	Packing quantity	Buy online

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.