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Click here for more informationGAN039-650NTB
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Features and benefits
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Simplified driver design as standard level MOSFET gate drivers can be used:
0 V to 12 V drive voltage
Gate threshold voltage VGSth of 4 V
Robust gate oxide with ±20 V VGS rating
High gate threshold voltage of 4 V for gate bounce immunity
Low body diode Vf for reduced losses and simplified dead-time adjustments
Transient over-voltage capability for increased robustness
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CCPAK package technology:
Improved reliability, with reduced Rth(j-mb) for optimal cooling
Lower inductances for lower switching losses and EMI
150 °C maximum junction temperature
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joints
Applications
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
Parametrics
Type number | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
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GAN039-650NTB | SOT8005 | CCPAK1212i | Production | cascode | N | 1 | 650 | 39 | 150 | 58.5 | 5 | 26 | 250 | 187 | 3.9 | N | 1979.9999 | 144 | 2020-07-30 |
Package
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
GAN039-650NTB | GAN039-650NTBZ (934662153139) |
Active | 039INTB |
CCPAK1212i (SOT8005) |
SOT8005 | Not available |
Environmental information
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
---|---|---|---|---|
GAN039-650NTB | GAN039-650NTBZ | GAN039-650NTB |
Series
Documentation (23)
File name | Title | Type | Date |
---|---|---|---|
GAN039-650NTB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Data sheet | 2023-12-05 |
AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
AN90030_translated | ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
SOT8005 | 3D model for products with SOT8005 package | Design support | 2023-03-13 |
Leaflet_CCPAK_Power_GaN_FETs_update_LR_10112023 | Leaflet CCPAK Power GaN FETs 2023 | Leaflet | 2023-10-11 |
nexperia_document_leaflet_GaN_FETs_2023 | Power GaN FETs leaflet | Leaflet | 2025-01-10 |
GAN039-650NxB_models_LTspice | GAN039-650NxB LTspice model | SPICE model | 2023-11-28 |
GAN039-650NxB_models_SIMetrix | GAN039-650NxB SIMetrix SPICE model | SPICE model | 2023-11-28 |
TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
UM90008 | NX-HB-GAN039-TSCUL 3.5 kW half-bridge evaluation board with top-side cooled GaN FETs | User manual | 2023-10-17 |
UM90024 | 4 kW analogue bridgeless totem-pole PFC evaluation board | User manual | 2023-11-21 |
UM90028 | NX-DP-GAN039-TSC double pulse evaluation board with top-side cooled CCPAK GaN FETs | User manual | 2024-01-09 |
nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术: 高效功率转换的需求 | White paper | 2020-08-17 |
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |