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GAN039-650NTB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Features and benefits

  • Simplified driver design as standard level MOSFET gate drivers can be used:
    • 0 V to 12 V drive voltage

    • Gate threshold voltage VGSth of 4 V

  • Robust gate oxide with ±20 V VGS rating

  • High gate threshold voltage of 4 V for gate bounce immunity

  • Low body diode Vf for reduced losses and simplified dead-time adjustments

  • Transient over-voltage capability for increased robustness

  • CCPAK package technology:
    • Improved reliability, with reduced Rth(j-mb) for optimal cooling

    • Lower inductances for lower switching losses and EMI

    • 150 °C maximum junction temperature

    • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment

    • Easy solder wetting for good mechanical solder joints

Applications

  • Hard and soft switching converters for industrial and datacom power

  • Bridgeless totempole PFC

  • PV and UPS inverters

  • Servo motor drives

Parametrics

Type number Package version Package name Product status Configuration Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
GAN039-650NTB SOT8005 CCPAK1212i Production cascode N 1 650 39 150 58.5 5 26 250 187 3.9 N 1979.9999 144 2020-07-30

Package

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
GAN039-650NTB GAN039-650NTBZ
(934662153139)
Active 039INTB SOT8005
CCPAK1212i
(SOT8005)
SOT8005 Not available

Environmental information

Type number Orderable part number Chemical content RoHS RHF-indicator
GAN039-650NTB GAN039-650NTBZ GAN039-650NTB rohs rhf
Quality and reliability disclaimer

Documentation (23)

File name Title Type Date
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Data sheet 2023-12-05
AN90004 Probing considerations for fast switching applications Application note 2019-11-15
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
AN90030 Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
AN90030_translated ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 Application note 2023-04-03
SOT8005 3D model for products with SOT8005 package Design support 2023-03-13
Leaflet_CCPAK_Power_GaN_FETs_update_LR_10112023 Leaflet CCPAK Power GaN FETs 2023 Leaflet 2023-10-11
nexperia_document_leaflet_GaN_FETs_2023 Power GaN FETs leaflet Leaflet 2025-01-10
GAN039-650NxB_models_LTspice GAN039-650NxB LTspice model SPICE model 2023-11-28
GAN039-650NxB_models_SIMetrix GAN039-650NxB SIMetrix SPICE model SPICE model 2023-11-28
TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21
UM90008 NX-HB-GAN039-TSCUL 3.5 kW half-bridge evaluation board with top-side cooled GaN FETs User manual 2023-10-17
UM90024 4 kW analogue bridgeless totem-pole PFC evaluation board User manual 2023-11-21
UM90028 NX-DP-GAN039-TSC double pulse evaluation board with top-side cooled CCPAK GaN FETs User manual 2024-01-09
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术: 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_robustness_aecq101 White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification White paper 2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CN Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性) White paper 2020-07-15