Features and benefits
- Simplified driver design as standard level MOSFET gate drivers can be used:
- 0 V to 12 V drive voltage
- Gate threshold voltage VGSth of 4 V
- Robust gate oxide with ±20 V VGS rating
- High gate threshold voltage of 4 V for gate bounce immunity
- Low body diode Vf for reduced losses and simplified dead-time adjustments
- Transient over-voltage capability for increased robustness
- CCPAK package technology:
- Improved reliability, with reduced Rth(j-mb) for optimal cooling
- Lower inductances for lower switching losses and EMI
- 175 °C maximum junction temperature
- High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
- Visual (AOI) soldering inspection, no need for expensive x-ray equipment
- Easy solder wetting for good mechanical solder joints
Applications
- Hard and soft switching converters for industrial and datacom power
- Bridgeless totempole PFC
- PV and UPS inverters
- Servo motor drives
Parametrics
Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GAN039-650NTB | SOT8005 | CCPAK | Development | N | 1 | 650 | 39 | 150 | 58.5 | 5 | 26 | 250 | 187 | 3.9 | N | 1980 | 144 | 2020-07-30 |
Package
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
GAN039-650NTB | GAN039-650NTBZ ( 9346 621 53139 ) | Development | 039INTBX | ![]() CCPAK (SOT8005) | SOT8005 | Reel 13" Q4/T2 |
Quality, reliability & chemical content
Type number | Orderable part number | Chemical content | RoHS / RHF | MSL | MSL leadfree |
---|---|---|---|---|---|
GAN039-650NTB | GAN039-650NTBZ | Not available |
Documentation (5)
File name | Title | Type | Date |
---|---|---|---|
GAN039-650NTB | 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package | Data sheet | 2021-04-19 |
nexperia_document_leaflet_GaN_CCPAK | CCPAK Power GaN FETs flyer | Leaflet | 2020-08-17 |
nexperia_document_leaflet_CCPAK_2020_CHN | CCPAK Power GaN FETs flyer | Leaflet | 2020-08-20 |
nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术: 高效功率转换的需求 | White paper | 2020-08-17 |
Support
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Ordering, pricing & availability
Type number | Orderable part number | Ordering code (12NC) | Packing | Packing quantity | Buy online |
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Sample
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