Features and benefits
- Copper clip for low package inductance and resistance
- High ID max rating up to 40 A per channel
- Flexible leads for improved reliability
- Exposed leads allow for easy optical inspection
- Separate drain connections
- High current transient robustness
- Logic and standard level
- AEC-Q101 qualified and industrial grades
- Including the ASFETs for Repetitive Avalanche portfolios (Automotive and Industrial)
- Including the LFPAK56D half-bridge portfolios for space constrained applications (Industrial and Automotive)
Featured products
Featured documents
Latest videos
How to select a power MOSFET for your automotive repetitive avalanche application - Quick Learning
Parametric search

Products
Automotive qualified products (AEC-Q100/Q101)
Type number | Description | Status | Quick access |
---|---|---|---|
BUK7K12-60E | Dual N-channel 60 V, 9.3 mΩ standard level MOSFET | Production | |
BUK7K13-60E | Dual N-channel 60 V, 10 mΩ standard level MOSFET | Production | |
BUK7K134-100E | Dual N-channel 100 V, 121 mΩ standard level MOSFET | Production | |
BUK7K15-80E | Dual N-channel 80 V, 15 mΩ standard level MOSFET | Production | |
BUK7K17-60E | Dual N-channel 60 V, 14 mΩ standard level MOSFET | Production | |
BUK7K17-80E | Dual N-channel 80 V, 17 mΩ standard level MOSFET | Production | |
BUK7K18-40E | Dual N-channel 40 V, 19 mΩ standard level MOSFET | Production | |
BUK7K23-80E | Dual N-channel 80 V, 23 mΩ standard level MOSFET | Production | |
BUK7K25-40E | Dual N-channel 40 V, 25 mΩ standard level MOSFET | Production | |
BUK7K29-100E | Dual N-channel 100 V, 24.5 mΩ standard level MOSFET | Production | |
BUK7K32-100E | Dual N-channel 100 V, 27.5 mΩ standard level MOSFET | Production | |
BUK7K35-60E | Dual N-channel 60 V, 30 mΩ standard level MOSFET | Production | |
BUK7K45-100E | Dual N-channel 100 V, 37.6 mΩ standard level MOSFET | Production | |
BUK7K52-60E | Dual N-channel 60 V, 45 mΩ standard level MOSFET | Production | |
BUK7K5R1-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | Production | |
BUK7K5R6-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | Production | |
BUK7K6R2-40E | Dual N-channel 40 V, 5.8 mΩ standard level MOSFET | Production | |
BUK7K6R8-40E | Dual N-channel 40 V, 6.8 mΩ standard level MOSFET | Production | |
BUK7K89-100E | Dual N-channel 100 V, 82.5 mΩ standard level MOSFET | Production | |
BUK7K8R7-40E | Dual N-channel 40 V, 8.5 mΩ standard level MOSFET | Production | |
BUK7V4R2-40H | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
BUK9K12-60E | Dual N-channel 60 V, 11.5 mΩ logic level MOSFET | Production | |
BUK9K13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D | Production | |
BUK9K13-60E | Dual N-channel 60 V, 12.5 mΩ logic level MOSFET | Production | |
BUK9K13-60RA | Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K134-100E | Dual N-channel 100 V, 159 mΩ logic level MOSFET | Production | |
BUK9K17-60E | Dual N-channel 60 V, 17 mΩ logic level MOSFET | Production | |
BUK9K18-40E | Dual N-channel 40 V, 19.5 mΩ logic level MOSFET | Production | |
BUK9K20-80E | Dual N-channel 80 V, 20 mΩ logic level MOSFET | Production | |
BUK9K22-80E | Dual N-channel 80 V, 22 mΩ logic level MOSFET | Production | |
BUK9K25-40E | Dual N-channel 40 V, 29 mΩ logic level MOSFET | Production | |
BUK9K25-40RA | Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K29-100E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K30-80E | Dual N-channel 80 V, 30 mΩ logic level MOSFET | Production | |
BUK9K32-100E | Dual N-channel 100 V, 33 mΩ logic level MOSFET | Production | |
BUK9K35-60E | Dual N-channel 60 V, 35 mΩ logic level MOSFET | Production | |
BUK9K35-60RA | Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K45-100E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K52-60E | Dual N-channel 60 V, 55 mΩ logic level MOSFET | Production | |
BUK9K52-60RA | Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K5R1-30E | Dual N-channel 30 V, 5.3 mΩ logic level MOSFET | Production | |
BUK9K5R6-30E | Dual N-channel 30 V, 5.8 mΩ logic level MOSFET | Production | |
BUK9K6R2-40E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K6R8-40E | Dual N-channel 40 V, 7.2 mΩ logic level MOSFET | Production | |
BUK9K89-100E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K8R7-40E | Dual N-channel 40 V, 9.4 mΩ logic level MOSFET | Production | |
BUK9V13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | Production |
MOSFETs
Type number | Description | Status | Quick access |
---|---|---|---|
BUK7K12-60E | Dual N-channel 60 V, 9.3 mΩ standard level MOSFET | Production | |
BUK7K13-60E | Dual N-channel 60 V, 10 mΩ standard level MOSFET | Production | |
BUK7K134-100E | Dual N-channel 100 V, 121 mΩ standard level MOSFET | Production | |
BUK7K15-80E | Dual N-channel 80 V, 15 mΩ standard level MOSFET | Production | |
BUK7K17-60E | Dual N-channel 60 V, 14 mΩ standard level MOSFET | Production | |
BUK7K17-80E | Dual N-channel 80 V, 17 mΩ standard level MOSFET | Production | |
BUK7K18-40E | Dual N-channel 40 V, 19 mΩ standard level MOSFET | Production | |
BUK7K23-80E | Dual N-channel 80 V, 23 mΩ standard level MOSFET | Production | |
BUK7K25-40E | Dual N-channel 40 V, 25 mΩ standard level MOSFET | Production | |
BUK7K29-100E | Dual N-channel 100 V, 24.5 mΩ standard level MOSFET | Production | |
BUK7K32-100E | Dual N-channel 100 V, 27.5 mΩ standard level MOSFET | Production | |
BUK7K35-60E | Dual N-channel 60 V, 30 mΩ standard level MOSFET | Production | |
BUK7K45-100E | Dual N-channel 100 V, 37.6 mΩ standard level MOSFET | Production | |
BUK7K52-60E | Dual N-channel 60 V, 45 mΩ standard level MOSFET | Production | |
BUK7K5R1-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | Production | |
BUK7K5R6-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | Production | |
BUK7K6R2-40E | Dual N-channel 40 V, 5.8 mΩ standard level MOSFET | Production | |
BUK7K6R8-40E | Dual N-channel 40 V, 6.8 mΩ standard level MOSFET | Production | |
BUK7K89-100E | Dual N-channel 100 V, 82.5 mΩ standard level MOSFET | Production | |
BUK7K8R7-40E | Dual N-channel 40 V, 8.5 mΩ standard level MOSFET | Production | |
BUK7V4R2-40H | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
BUK9K12-60E | Dual N-channel 60 V, 11.5 mΩ logic level MOSFET | Production | |
BUK9K13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D | Production | |
BUK9K13-60E | Dual N-channel 60 V, 12.5 mΩ logic level MOSFET | Production | |
BUK9K13-60RA | Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K134-100E | Dual N-channel 100 V, 159 mΩ logic level MOSFET | Production | |
BUK9K17-60E | Dual N-channel 60 V, 17 mΩ logic level MOSFET | Production | |
BUK9K18-40E | Dual N-channel 40 V, 19.5 mΩ logic level MOSFET | Production | |
BUK9K20-80E | Dual N-channel 80 V, 20 mΩ logic level MOSFET | Production | |
BUK9K22-80E | Dual N-channel 80 V, 22 mΩ logic level MOSFET | Production | |
BUK9K25-40E | Dual N-channel 40 V, 29 mΩ logic level MOSFET | Production | |
BUK9K25-40RA | Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K29-100E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K30-80E | Dual N-channel 80 V, 30 mΩ logic level MOSFET | Production | |
BUK9K32-100E | Dual N-channel 100 V, 33 mΩ logic level MOSFET | Production | |
BUK9K35-60E | Dual N-channel 60 V, 35 mΩ logic level MOSFET | Production | |
BUK9K35-60RA | Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K45-100E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K52-60E | Dual N-channel 60 V, 55 mΩ logic level MOSFET | Production | |
BUK9K52-60RA | Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K5R1-30E | Dual N-channel 30 V, 5.3 mΩ logic level MOSFET | Production | |
BUK9K5R6-30E | Dual N-channel 30 V, 5.8 mΩ logic level MOSFET | Production | |
BUK9K6R2-40E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K6R8-40E | Dual N-channel 40 V, 7.2 mΩ logic level MOSFET | Production | |
BUK9K89-100E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K8R7-40E | Dual N-channel 40 V, 9.4 mΩ logic level MOSFET | Production | |
BUK9V13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
PSMN011-60HL | N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN012-60HL | N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche | Production | |
PSMN013-40VLD | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
PSMN013-60HL | N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN013-60HS | N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN014-40HLD | N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology | Production | |
PSMN014-60HS | N-channel 60 V, 14 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN025-100HS | N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN028-100HS | N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN029-100HL | N-channel 100 V, 29 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN033-100HL | N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN038-100HS | N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN045-100HL | N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN4R2-40VSH | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
PSMN6R1-40HL | N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN6R8-40HS | N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN8R0-40HL | N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN8R5-40HS | N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN9R3-60HS | N-channel 60 V, 9.3 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production |
Documentation
File name | Title | Type | Date |
---|---|---|---|
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
LFPAK56D_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2017-05-05 |
SOT1205 | 3D model for products with SOT1205 package | Design support | 2017-06-30 |
nexperia_document_leaflet_LFPAK56D_factsheet_LR_201708 | LFPAK56D the ultimate dual MOSFET | Leaflet | 2017-08-17 |
AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2019-03-01 |
AN50003 | Driving solenoids in automotive applications | Application note | 2023-11-03 |
AN50004 | Using power MOSFETs in DC motor control applications | Application note | 2021-03-02 |
AN50005 | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
AN50014 | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
If you have a support question, let us know. If you are in need of design support, let us know and fill in the answer form, well get back to you shortly.
Or contact us for further support.
Datasheets (66)
File name | Title | Type | Date |
---|---|---|---|
BUK7K12-60E | Dual N-channel 60 V, 9.3 mΩ standard level MOSFET | Data sheet | 2018-04-04 |
BUK7K13-60E | Dual N-channel 60 V, 10 mΩ standard level MOSFET | Data sheet | 2018-04-04 |
BUK7K134-100E | Dual N-channel 100 V, 121 mΩ standard level MOSFET | Data sheet | 2018-04-04 |
BUK7K15-80E | Dual N-channel 80 V, 15 mΩ standard level MOSFET | Data sheet | 2018-05-11 |
BUK7K17-60E | Dual N-channel 60 V, 14 mΩ standard level MOSFET | Data sheet | 2018-04-05 |
BUK7K17-80E | Dual N-channel 80 V, 17 mΩ standard level MOSFET | Data sheet | 2018-05-11 |
BUK7K18-40E | Dual N-channel 40 V, 19 mΩ standard level MOSFET | Data sheet | 2018-04-05 |
BUK7K23-80E | Dual N-channel 80 V, 23 mΩ standard level MOSFET | Data sheet | 2018-05-11 |
BUK7K25-40E | Dual N-channel TrenchMOS standard level FET | Data sheet | 2017-04-20 |
BUK7K29-100E | Dual N-channel 100 V, 24.5 mΩ standard level MOSFET | Data sheet | 2018-04-06 |
BUK7K32-100E | Dual N-channel 100 V, 27.5 mΩ standard level MOSFET | Data sheet | 2018-04-04 |
BUK7K35-60E | Dual N-channel 60 V, 30 mΩ standard level MOSFET | Data sheet | 2018-04-04 |
BUK7K45-100E | Dual N-channel 100 V, 37.6 mΩ standard level MOSFET | Data sheet | 2018-04-04 |
BUK7K52-60E | Dual N-channel 60 V, 45 mΩ standard level MOSFET | Data sheet | 2018-04-05 |
BUK7K5R1-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | Data sheet | 2018-04-05 |
BUK7K5R6-30E | Dual N-channel 30 V, 5.6 mΩ standard level MOSFET | Data sheet | 2018-04-04 |
BUK7K6R2-40E | Dual N-channel 40 V, 5.8 mΩ standard level MOSFET | Data sheet | 2018-04-05 |
BUK7K6R8-40E | Dual N-channel 40 V, 6.8 mΩ standard level MOSFET | Data sheet | 2018-04-05 |
BUK7K89-100E | Dual N-channel 100 V, 82.5 mΩ standard level MOSFET | Data sheet | 2018-04-04 |
BUK7K8R7-40E | Dual N-channel 40 V, 8.5 mΩ standard level MOSFET | Data sheet | 2018-04-04 |
BUK7V4R2-40H | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | Data sheet | 2023-05-09 |
BUK9K12-60E | Dual N-channel 60 V, 11.5 mΩ logic level MOSFET | Data sheet | 2018-04-06 |
BUK9K13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D | Data sheet | 2021-02-11 |
BUK9K13-60E | Dual N-channel 60 V, 12.5 mΩ logic level MOSFET | Data sheet | 2018-04-04 |
BUK9K13-60RA | Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Data sheet | 2020-12-02 |
BUK9K134-100E | Dual N-channel 100 V, 159 mΩ logic level MOSFET | Data sheet | 2018-04-04 |
BUK9K17-60E | Dual N-channel 60 V, 17 mΩ logic level MOSFET | Data sheet | 2018-04-06 |
BUK9K18-40E | Dual N-channel 40 V, 19.5 mΩ logic level MOSFET | Data sheet | 2018-04-05 |
BUK9K20-80E | Dual N-channel 80 V, 20 mΩ logic level MOSFET | Data sheet | 2018-05-11 |
BUK9K22-80E | Dual N-channel 80 V, 22 mΩ logic level MOSFET | Data sheet | 2018-05-11 |
BUK9K25-40E | Dual N-channel 40 V, 29 mΩ logic level MOSFET | Data sheet | 2018-04-05 |
BUK9K25-40RA | Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Data sheet | 2020-12-02 |
BUK9K29-100E | Dual N-channel TrenchMOS logic level FET | Data sheet | 2017-04-20 |
BUK9K30-80E | Dual N-channel 80 V, 30 mΩ logic level MOSFET | Data sheet | 2018-05-12 |
BUK9K32-100E | Dual N-channel 100 V, 33 mΩ logic level MOSFET | Data sheet | 2018-04-05 |
BUK9K35-60E | Dual N-channel 60 V, 35 mΩ logic level MOSFET | Data sheet | 2018-04-06 |
BUK9K35-60RA | Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Data sheet | 2020-12-02 |
BUK9K45-100E | Dual N-channel TrenchMOS logic level FET | Data sheet | 2017-04-20 |
BUK9K52-60E | Dual N-channel 60 V, 55 mΩ logic level MOSFET | Data sheet | 2018-04-06 |
BUK9K52-60RA | Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Data sheet | 2020-12-02 |
BUK9K5R1-30E | Dual N-channel 30 V, 5.3 mΩ logic level MOSFET | Data sheet | 2018-04-04 |
BUK9K5R6-30E | Dual N-channel 30 V, 5.8 mΩ logic level MOSFET | Data sheet | 2018-04-04 |
BUK9K6R2-40E | Dual N-channel TrenchMOS logic level FET | Data sheet | 2017-04-20 |
BUK9K6R8-40E | Dual N-channel 40 V, 7.2 mΩ logic level MOSFET | Data sheet | 2018-04-05 |
BUK9K89-100E | Dual N-channel TrenchMOS logic level FET | Data sheet | 2017-04-20 |
BUK9K8R7-40E | Dual N-channel 40 V, 9.4 mΩ logic level MOSFET | Data sheet | 2018-04-06 |
BUK9V13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | Data sheet | 2023-05-09 |
PSMN011-60HL | N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-30 |
PSMN012-60HL | N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche | Data sheet | 2022-09-30 |
PSMN013-40VLD | Dual N-channel 40 V, 13 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | Data sheet | 2021-08-16 |
PSMN013-60HL | N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-30 |
PSMN013-60HS | N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-26 |
PSMN014-40HLD | N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology | Data sheet | 2022-09-26 |
PSMN014-60HS | N-channel 60 V, 14 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-26 |
PSMN025-100HS | N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-26 |
PSMN028-100HS | N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-26 |
PSMN029-100HL | N-channel 100 V, 29 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-26 |
PSMN033-100HL | N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-30 |
PSMN038-100HS | N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-26 |
PSMN045-100HL | N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-26 |
PSMN4R2-40VSH | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | Data sheet | 2021-08-16 |
PSMN6R1-40HL | N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-30 |
PSMN6R8-40HS | N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-10-19 |
PSMN8R0-40HL | N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-30 |
PSMN8R5-40HS | N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-26 |
PSMN9R3-60HS | N-channel 60 V, 9.3 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Data sheet | 2022-09-26 |