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PMDT670UPE

20 V, 550 mA dual P-channel Trench MOSFET

Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Not recommended for new automotive design-ins.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
PMDT670UPE PMDT670UPE,115 934065734115 SOT666 Order product

Features and benefits

  • Very fast switching

  • Trench MOSFET technology

  • ESD protection up to 2 kV

Applications

  • Relay driver

  • High-speed line driver

  • High-side loadswitch

  • Switching circuits

Parametrics

Type numberPackage versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)VGS [max] (V)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)integrated gate-source ESD protection diodesVESD HBM (V)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Ptot [max] (W)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PMDT670UPESOT666SOT666ProductionP2-2088501500Y2000150-0.550.180.760.33-0.8N58212011-09-15

PCB Symbol, Footprint and 3D Model

Model NameDescription

Package

Type numberOrderable part number, (Ordering code (12NC))StatusMarkingPackagePackage informationReflow-/Wave solderingPacking
PMDT670UPEPMDT670UPE,115
( 9340 657 34115 ) 		ActiveAG

(SOT666) 		SOT666REFLOW_BG-BD-1
SOT666_115

Environmental information

Type numberOrderable part numberChemical contentRoHSRHF-indicator
PMDT670UPEPMDT670UPE,115PMDT670UPE
Quality and reliability disclaimer

Documentation (13)

File nameTitleTypeDate
PMDT670UPE20 V, 550 mA P-channel Trench MOSFETData sheet2022-12-28
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
PMDT670UPE_06_02_2012PMDT670UPE.06_02_2012 Spice parameterSPICE model2012-04-16
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
SOT666_115Reel pack for SMD, 7"; Q2/T3 product orientationPacking information2020-06-12
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
PMDT670UPE_06_02_2012PMDT670UPE.06_02_2012 Spice parameterSPICE model2012-04-16

PCB Symbol, Footprint and 3D Model

Model NameDescription

Ordering, pricing & availability

Type numberOrderable part numberOrdering code (12NC)PackingPacking quantityBuy online
PMDT670UPEPMDT670UPE,115934065734115SOT666_115- Order product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet